AUIRFS4010-7TRL

$2.88

Description：MOSFET N-CH 100V 190A D2PAK-7P
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:ea3c107c57b2 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFS4010-7TRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 190A D2PAK-7P. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS4010-7TRL

Description：MOSFET N-CH 100V 190A D2PAK-7P
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：190A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：4mOhm @ 110A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：230 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：9830 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：380W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK (7-Lead)
Package / Case：TO-263-7, D2PAK (6 Leads + Tab)

Single FETs, MOSFETs datasheet and documents for AUIRFS4010-7TRL

AUIRFS4010-7TRL

Single FETs, MOSFETs Overview

The AUIRFS4010-7TRL is a single N-channel HEXFET power MOSFET from Infineon Technologies, housed in a D2-Pak 7-pin (TO-263) surface-mount package. It features a drain-source breakdown voltage of 100 V and a maximum continuous drain current of 190 A at 25°C case temperature. The device exhibits a typical on-resistance of 3.3 mΩ with a maximum rating of 4.0 mΩ at VGS = 10V. Key electrical parameters include a total gate charge of 150 nC, a peak diode recovery dv/dt capability of 26 V/ns, and an operating junction temperature range extending up to 175°C.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards for high reliability applications
Advanced process technology enabling ultra-low on-resistance per silicon area
Enhanced dV/dt and dI/dt capabilities for robust switching performance
Repetitive avalanche energy allowed up to the maximum junction temperature

Single FETs, MOSFETs Applications

Automotive load switching
Motor control circuits
Power distribution units
DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging format. The -7TRL suffix indicates tape and reel packaging, whereas other suffixes may denote tube quantities. Confirm that the required moisture sensitivity level and lead-free status align with assembly specifications. Ensure the component meets the intended automotive qualification requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V N-channel MOSFET with low conduction losses is required for automotive environments. The D2-Pak 7-pin package offers efficient thermal dissipation suitable for high-current applications. Consider the 175°C junction temperature rating for designs requiring operation under elevated thermal stress conditions without derating constraints.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, specifically designed using advanced processing techniques to minimize resistance within a given silicon footprint. The product line targets automotive and industrial sectors where durability and efficiency are critical. The integration of automotive qualification ensures compliance with rigorous industry standards for electronic components used in vehicle systems.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement guides for verified substitutes. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility in existing designs.