AUIRFS4310

Description：MOSFET N-CH 100V 75A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:3ec628931a48 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFS4310 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 75A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS4310

Description：MOSFET N-CH 100V 75A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：250 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7670 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS4310

AUIRFS4310

Single FETs, MOSFETs Overview

The AUIRFS4310 is an N-channel HEXFET power MOSFET designed for automotive applications. It features a maximum drain-source voltage (VDS) of 100 V and a typical on-resistance (RDS(on)) of 5.6 mΩ, with a maximum rating of 7.0 mΩ at VGS = 10 V and ID = 75 A. The device supports a continuous silicon-limited drain current of 130 A and a package-limited current of 75 A at TC = 25°C. It operates within a junction temperature range of -55°C to +175°C and offers a single pulse avalanche energy capability of up to 980 mJ.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Advanced process technology enabling ultra-low on-resistance
Fast switching speed with dynamic dv/dt rating
Repetitive avalanche operation allowed up to Tjmax

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-side and low-side load switches
DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the packaging format, as the base part number corresponds to tube packaging while the TRL suffix indicates tape and reel. Confirm that the application environment meets the specified thermal and electrical stress limits defined in the absolute maximum ratings. Ensure compatibility with the D2-Pak or TO-262 footprint depending on the selected variant.

Single FETs, MOSFETs Selection Notes

Select this component when high reliability and low conduction losses are required in automotive environments. The 175°C operating temperature provides robustness against high ambient heat. Consider the package-limited current of 75 A for PCB layout constraints rather than the higher silicon-limited value. Verify gate drive requirements against the total gate charge specifications for optimal switching performance.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family from Infineon Technologies, utilizing advanced processing techniques to minimize resistance per silicon area. It is specifically engineered to meet the rigorous demands of automotive electronics, combining efficiency with durability. The product line includes variants such as the AUIRFSL4310 in TO-262 packaging.