AUIRFS8407-7P

$8.46

Description：MOSFET N-CH 40V 240A D2PAK-7
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:a7ecbc84f2a8 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFS8407-7P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 240A D2PAK-7. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS8407-7P

Description：MOSFET N-CH 40V 240A D2PAK-7
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：240A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs：225 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7437 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：231W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-7
Package / Case：TO-263-7, D2PAK (6 Leads + Tab)

Single FETs, MOSFETs datasheet and documents for AUIRFS8407-7P

AUIRFS8407-7P

Single FETs, MOSFETs Overview

The AUIRFS8407-7P is an automotive-grade HEXFET N-channel enhancement mode MOSFET in a D2PAK-7 package. It features a 40V drain-source breakdown voltage and a maximum on-resistance of 1.3mΩ at VGS=10V. The device supports a continuous drain current of 240A (package limited) or 306A (silicon limited). Key electrical parameters include a gate threshold voltage range of 2.2V to 3.9V, total gate charge of 150nC typical, and a junction temperature rating up to 175°C.

Single FETs, MOSFETs Feature Summary

Advanced process technology achieving ultra-low on-resistance per silicon area
Designed for repetitive avalanche operation up to the maximum junction temperature
Fast switching characteristics with improved dv/dt and di/dt capabilities
Qualified to AEC-Q101 standards for automotive reliability

Single FETs, MOSFETs Applications

Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid systems
Heavy Loads
DC-DC Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the datasheet table to confirm the packaging format. Standard pack is available in tubes of 50 units. Tape and reel options are offered in quantities of 800 units, distinguished by left or right reel orientation. Confirm RoHS compliance status and lead-free designation during procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-current automotive circuits requiring low conduction losses. Ensure the thermal design accommodates the 0.65°C/W junction-to-case resistance. Verify that the gate drive voltage meets the 10V requirement for optimal RDS(on) performance. Consider the 175°C operating limit for high-temperature environments.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family from Infineon Technologies, originally developed by International Rectifier. It utilizes advanced processing techniques to minimize on-resistance while maintaining robust automotive qualification. The AU prefix indicates adherence to automotive industry requirements for product discontinuance and process change notifications.

Single FETs, MOSFETs Replacement Considerations

Datasheet lists similar parts such as AUIRFS8407-7TRL and AUIRFS8407-7TRR which share identical electrical specifications but differ in tape and reel orientation. No other cross-model substitutes are explicitly confirmed in the provided documentation.