AUIRFSL4010-306

Single FETs, MOSFETs Overview

The AUIRFSL4010-306 is an automotive-grade, single N-channel power MOSFET from Infineon Technologies. It utilizes the OptiMOS technology and is housed in a TO-262 (I2PAK) through-hole package. The device features a maximum drain-source voltage of 100 V and a typical gate charge of 143 nC at 10 V. It supports a continuous drain current of up to 180 A at 25°C and offers a maximum on-resistance of 4.7 mΩ at 10 V. The component operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for high reliability.
• OptiMOS technology providing low on-resistance and robust thermal performance.
• High junction temperature capability allowing operation up to 175°C.

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control applications
• General automotive switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '-306' against official Infineon documentation to confirm tape-and-reel packaging details. Ensure the selected variant matches the required automotive quality grade and RoHS compliance status for your specific manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component when a through-hole TO-262 package is required for high-current automotive applications. Consider the 100V rating and 4.7mΩ on-resistance trade-off against available surface-mount alternatives if board space permits lower profile designs.

Single FETs, MOSFETs Part Context

This part belongs to the AUIRFS/SL series of automotive power MOSFETs. It shares the core silicon technology with the IRFSL4010 but includes additional automotive-specific testing and traceability requirements mandated by the 'AU' prefix designation.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the TO-262 package and 100V rating. Verify that any substitute maintains equivalent RDS(on) and Qg specifications to ensure circuit compatibility without redesigning the gate drive network.