Single FETs, MOSFETs AUIRFSL6535 product image

AUIRFSL6535

$1.26
  • Description:MOSFET N-CH 300V 19A TO262-3-901
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk

SKU:5e058c784364 Category: Brand:

  
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AUIRFSL6535 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 300V 19A TO262-3-901. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFSL6535

  • Description:MOSFET N-CH 300V 19A TO262-3-901
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):300 V
  • Current - Continuous Drain (Id) @ 25°C:19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:185mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id:5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2340 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):210W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO262-3-901
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AUIRFSL6535

AUIRFSL6535

Single FETs, MOSFETs Overview

The AUIRFSL6535 is an automotive-grade N-channel power MOSFET manufactured by Infineon Technologies under the International Rectifier brand. It utilizes advanced HEXFET process technology to achieve low on-resistance and fast switching capabilities within a TO-262-3 (D2PAK) through-hole package. The device features a drain-source breakdown voltage of 300 V, a continuous drain current of 19 A, and a maximum on-resistance of 145 mΩ at 10 V gate drive. It supports a junction temperature up to 175°C and holds AEC-Q101 qualification for automotive reliability.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified to AEC-Q101 standards for enhanced reliability in vehicle environments
  • Advanced HEXFET process technology enabling low on-resistance per silicon area
  • Fast switching characteristics with low gate charge for efficient power conversion
  • Robust thermal performance supporting operation up to 175°C junction temperature

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • DC-DC converter circuits
  • Motor control applications
  • High-side or low-side switching loads

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to potential counterfeit risks in the aftermarket. Confirm specific lot codes and date codes against project requirements. Ensure packaging integrity matches the specified tube format. Cross-reference datasheet revisions to guarantee parameter consistency with design specifications before final procurement commitment.

Single FETs, MOSFETs Selection Notes

Select this component when automotive qualification and high-voltage handling are required. Compare Rds(on) values against thermal constraints to ensure adequate heat dissipation in the TO-262-3 package. Evaluate gate drive requirements against the 5 V threshold voltage. Consider alternative packages if surface-mount space is limited, as this model uses a through-hole configuration.

Single FETs, MOSFETs Part Context

This part belongs to the IRFS65xx series of automotive power MOSFETs. It shares core electrical characteristics with the AUIRFS6535TRL but differs in packaging and mounting style. The series is designed for robust performance in demanding automotive electrical systems, offering a balance of voltage rating and current handling capability.

Single FETs, MOSFETs Replacement Considerations

The AUIRFS6535TRL serves as a functional equivalent with identical electrical parameters but in a DPAK surface-mount package. Verify pinout compatibility and thermal resistance differences when substituting. No other direct cross-references are confirmed in public documentation.

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