AUIRFSL8408

$1.45

Description：MOSFET N-CH 40V 195A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:129ade66d130 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFSL8408 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 195A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFSL8408

Description：MOSFET N-CH 40V 195A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：324 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：10820 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：294W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AUIRFSL8408

AUIRFSL8408

Single FETs, MOSFETs Overview

The AUIRFSL8408 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a TO-262 package and operates with a drain-to-source voltage of 40 V. The device exhibits a typical on-resistance of 1.3 mΩ and a maximum of 1.6 mΩ at 25°C. Continuous drain current reaches 195 A when limited by the package, while silicon limitations allow up to 317 A. It supports junction temperatures up to 175°C and includes avalanche characteristics for robust operation.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with AEC-Q101 standards
Advanced process technology achieving ultra-low on-resistance per silicon area
Enhanced dv/dt and di/dt capabilities for improved switching performance
Capable of repetitive avalanche operation up to maximum junction temperature

Single FETs, MOSFETs Applications

Electric Power Steering (EPS)
Battery Switch applications
Start/Stop Micro Hybrid systems
High Voltage Loads
Switch Mode Power Supplies (SMPS)

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm that the part meets specific automotive quality requirements and matches the exact datasheet specifications provided. Ensure proper handling procedures are followed during storage and installation to maintain device reliability.

Single FETs, MOSFETs Selection Notes

Select this component for high-current automotive circuits requiring low conduction losses. Evaluate thermal management needs based on the specified power dissipation and thermal resistance values. Consider the package limitations versus silicon limits when designing for continuous current applications under varying case temperatures.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs designed for automotive environments. It utilizes specialized packaging to handle high currents while maintaining electrical isolation. The product line emphasizes efficiency and durability in demanding vehicular electronic systems.