AUIRFU1010Z

Description：MOSFET N-CH 55V 91A TO262
Series：-
Mfr：Infineon Technologies
Package：Tube

SKU:8082bb6a604e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFU1010Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 91A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFU1010Z

Description：MOSFET N-CH 55V 91A TO262
Series：-
Mfr：Infineon Technologies
Package：Tube
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-262
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AUIRFU1010Z

AUIRFU1010Z

Single FETs, MOSFETs Overview

The AUIRFU1010Z is an N-channel enhancement mode power MOSFET from Infineon Technologies, designed for automotive applications. It features a maximum drain-source voltage of 55 V and a continuous drain current of 91 A at 25°C. The device utilizes IPAK (TO-251) through-hole packaging with three pins. Key electrical parameters include a typical on-resistance of 7.5 mΩ at 10V gate drive and a gate threshold voltage range of 2V to 4V. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Automotive-grade reliability compliant with AEC-Q101 standards
Low on-resistance for efficient power switching
High thermal stability suitable for harsh environments

Single FETs, MOSFETs Applications

Automotive power distribution systems
Motor control circuits in vehicles
Lighting control modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'Z' indicates RoHS compliance and automotive qualification status. Confirm package type matches IPAK requirements. Check datasheet for latest revision history. Ensure sourcing channels provide original manufacturer documentation. Validate part authenticity before integration into designs.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and automotive durability are required. Compare on-resistance values against system efficiency targets. Evaluate thermal management needs based on IPAK package characteristics. Consider gate charge specifications for driver compatibility. Verify voltage ratings exceed circuit peak demands.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs. It is specifically engineered for robust performance in automotive electronics. The IPAK package offers mechanical stability for through-hole mounting. It serves as a reliable switch for high-current loads in vehicle networks.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other automotive-grade 55V N-channel MOSFETs in IPAK packages. Verify pinout compatibility and thermal resistance values. Ensure replacement parts meet the same AEC-Q101 qualification standards. Check for equivalent on-resistance and gate threshold voltage ranges.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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