AUIRFZ34N

Single FETs, MOSFETs Overview

The AUIRFZ34N is an automotive-grade, single N-channel power MOSFET from the HEXFET® series. It features a maximum drain-source voltage (VDS) of 55 V and a continuous drain current (ID) of 29 A at 25°C case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 40 mΩ at 10 V gate drive. Key electrical parameters include a typical gate charge (Qg) of 22.7 nC at 10 V and a gate-drain charge (Qgd) of 9.3 nC. Thermal performance includes a junction-to-case thermal resistance (RthJC) of 2.7 K/W. The component supports a maximum junction temperature (TJ) of 175 °C and operates within a temperature range of -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

• Automotive-grade qualification compliant with AEC-Q101 standards for high reliability in vehicle environments.
• Advanced planar technology utilizing the HEXFET® architecture for optimized switching performance and low conduction losses.
• Enhanced thermal management capabilities supporting high-power dissipation applications through robust package design.

Single FETs, MOSFETs Applications

• Automotive DC-DC converter circuits
• Motor control systems in vehicles
• High-side and low-side switching applications

Single FETs, MOSFETs Procurement Notes

Verify that the specific order contains the 'AU' prefix, which denotes automotive-grade qualification distinct from standard industrial variants like IRFZ34N. Confirm compliance with AEC-Q101 requirements if automotive certification is mandatory for the end application. Ensure sourcing channels provide traceability documentation consistent with Infineon's automotive supply chain protocols.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and high current handling are required alongside low on-resistance. Compare gate charge specifications against driving capability constraints to ensure efficient switching. Evaluate thermal resistance values against system heat dissipation limits to maintain junction temperatures within safe operating areas during continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET® Power MOSFET family, specifically tailored for automotive electronics. It serves as the qualified counterpart to the industrial IRFZ34N, sharing identical electrical characteristics but adhering to stricter manufacturing controls and reliability testing mandated for automotive use cases.

Single FETs, MOSFETs Replacement Considerations

The IRFZ34N is the direct industrial equivalent with matching electrical specifications. However, it lacks automotive qualification. Substitution requires verifying if the application environment permits non-automotive grade components or if AEC-Q101 compliance is strictly enforced by the system design.

Single FETs, MOSFETs FAQ

What distinguishes the AUIRFZ34N from the IRFZ34N?

The AUIRFZ34N is automotive-grade and AEC-Q101 qualified, whereas the IRFZ34N is an industrial-grade component. They share identical electrical parameters and pinouts.

What is the maximum junction temperature for this MOSFET?

The maximum junction temperature (TJ) is 175 °C, allowing for operation in high-temperature automotive environments.