AUIRFZ48ZS

Single FETs, MOSFETs Overview

The AUIRFZ48ZS is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D2PAK surface-mount package and operates with a drain-source voltage of 55V. The device supports a continuous drain current of 61A at a case temperature of 25°C, with a maximum on-resistance of 11mΩ at VGS=10V. It is qualified to AEC-Q101 standards, ensuring reliability for automotive environments. The component allows repetitive avalanche operation up to the maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards
• Advanced process technology enabling ultra-low on-resistance
• Capable of repetitive avalanche operation up to Tjmax
• Fast switching speed characteristics

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control applications
• High-side and low-side switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the package type and reel configuration. Confirm that the component meets the required AEC-Q101 qualification level for your target application. Check the datasheet for any recent package drawing updates or manufacturing changes. Ensure compatibility with your assembly process regarding moisture sensitivity levels.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-qualified N-channel MOSFET with low on-resistance is required. Consider the D2PAK package for surface mount thermal management needs. Evaluate the 55V rating against system voltage requirements. Review the safe operating area curves for pulsed current handling capabilities in your specific design.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is specifically designed for automotive applications requiring high reliability and efficiency. The 'AU' prefix indicates its automotive grade status. It utilizes advanced processing techniques to achieve low resistance per silicon area compared to standard industrial counterparts.

Single FETs, MOSFETs Replacement Considerations

Direct replacement parts are not explicitly listed in the provided documentation. Verify pinout compatibility and electrical parameters if substituting with other 55V automotive MOSFETs. Consult Infineon cross-reference tools for potential alternatives.