Single FETs, MOSFETs AUIRL3705Z product image

AUIRL3705Z

$0.84
  • Description:MOSFET N-CH 55V 75A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:0cb3b62fc0ae Category: Brand:

  
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AUIRL3705Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 75A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRL3705Z

  • Description:MOSFET N-CH 55V 75A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:60 nC @ 5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:2880 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):130W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRL3705Z

AUIRL3705Z

Single FETs, MOSFETs Overview

The AUIRL3705Z is an N-channel HEXFET power MOSFET with a 55V drain-source voltage rating. It supports up to 86A continuous drain current (silicon limited) and 75A (package limited). The device features a maximum on-resistance of 8.0mΩ at VGS=10V and 11mΩ at VGS=5V. It operates within a junction temperature range of -55°C to +175°C, dissipating up to 130W. Total gate charge is typically 40nC.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified per AEC-Q101 standards
  • Logic level gate drive capability
  • Repetitive avalanche operation allowed up to Tjmax
  • Lead-free and RoHS compliant construction

Single FETs, MOSFETs Applications

  • Automotive applications
  • General purpose switching
  • Power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required for the design, as the base model corresponds to TO-220AB. Confirm that the automotive qualification level meets the target application's reliability requirements. Ensure thermal management aligns with the specified junction-to-case resistance limits during operation.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and high current handling are critical. The logic level feature allows direct drive from standard logic interfaces. Consider the TO-220AB package for through-hole mounting or D2-Pak/TO-262 variants for surface mount needs.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family, designed for high-efficiency power switching. It utilizes advanced process technology to minimize on-resistance per silicon area. The series includes variants like AUIRL3705ZS and AUIRL3705L for different packaging options.

Single FETs, MOSFETs Replacement Considerations

IRL3705Z

Single FETs, MOSFETs FAQ

Is repetitive avalanche operation supported?

Yes, the datasheet explicitly states that repetitive avalanche is allowed up to the maximum junction temperature.

What is the gate threshold voltage range?

The gate threshold voltage ranges from a minimum of 1.0V to a maximum of 3.0V.

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