Single FETs, MOSFETs AUIRL7766M2TR product image

AUIRL7766M2TR

  • Description:MOSFET N-CH 100V 10A DIRECTFET
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:ae0feb4b0659 Category: Brand:

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AUIRL7766M2TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 10A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRL7766M2TR

  • Description:MOSFET N-CH 100V 10A DIRECTFET
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:10mOhm @ 31A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs:66 nC @ 4.5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:5305 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 62.5W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:DirectFET™ Isometric M4
  • Package / Case:DirectFET™ Isometric M4

Single FETs, MOSFETs datasheet and documents for AUIRL7766M2TR

AUIRL7766M2TR

Single FETs, MOSFETs Overview

The AUIRL7766M2TR is an Automotive Grade 1 N-Channel HEXFET Power MOSFET utilizing DirectFET M4 packaging. It features a 100V drain-source voltage rating and a maximum on-resistance of 10mΩ at VGS=10V. The device supports a continuous drain current of 51A (silicon limited) at TC=25°C and operates up to a junction temperature of 175°C. Key electrical parameters include a typical total gate charge of 44nC, a forward transconductance of 110S, and a single pulse avalanche energy capability of 237mJ.

Single FETs, MOSFETs Feature Summary

  • Advanced DirectFET packaging enables dual-sided cooling for high thermal transfer efficiency in automotive power systems.
  • Optimized for high-frequency DC-DC converters and heavy load applications on ICE, HEV, and EV platforms.
  • Logic level gate drive compatibility with low parasitic parameters for improved switching performance.
  • Robust repetitive avalanche capability ensures reliability under harsh electrical stress conditions.

Single FETs, MOSFETs Applications

  • Automotive DC-DC converter circuits
  • Heavy load switching in Electric Vehicle (EV) platforms
  • Hybrid Electric Vehicle (HEV) power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TR indicates tape and reel packaging configuration. Confirm Automotive Grade 1 qualification status via official Infineon documentation. Ensure design compliance with AEC-Q101 standards for automotive reliability requirements before integration into production systems.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high power density within a compact SO-8 footprint equivalent. Evaluate thermal resistance values based on specific PCB copper area and cooling methods. Consider the 175°C junction temperature limit for high-temperature operational environments compared to standard industrial grades.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's DirectFET family, combining silicon technology with advanced packaging. It replaces older discrete solutions by offering superior thermal performance and reduced board space. The M4 outline provides a standardized form factor compatible with existing assembly equipment.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Generic cross-references may not match the specific DirectFET M4 package dimensions or thermal characteristics required for automotive applications.

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