AUIRLR3410

Single FETs, MOSFETs Overview

The AUIRLR3410 is a single N-channel enhancement-mode power MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features a DPAK (TO-252) surface-mount package with three pins. The device supports a maximum drain-source voltage of 100 V and a continuous drain current of 17 A at case temperature. Key electrical parameters include a maximum on-resistance of 105 mΩ at 10 V gate drive and 155 mΩ at 4.5 V. Typical gate charge is 34 nC at 5 V, with an input capacitance of 800 pF at 25 V. It operates within a junction temperature range of -55 °C to +175 °C and holds AEC-Q101 automotive qualification.

Single FETs, MOSFETs Feature Summary

• Automotive-grade reliability certified under AEC-Q101 standards for robust performance in vehicle environments.
• Integrated isolated gate driver capability inherent to the 'AU' prefix designation for enhanced noise immunity.
• Optimized low on-resistance characteristics to minimize conduction losses in high-current switching applications.

Single FETs, MOSFETs Applications

• Automotive power distribution systems requiring isolated gate control.
• DC-DC converter circuits in vehicle electronics.
• Motor control interfaces for automotive actuators.

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official Infineon documentation to confirm pinout and isolation requirements. Ensure the ordering part number matches the required automotive grade certification. Cross-reference the datasheet version to validate thermal resistance values and absolute maximum ratings before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component when isolated gate drive signals are necessary in automotive environments. Compare total gate charge and on-resistance against non-isolated alternatives if isolation is not required. Verify that the DPAK package thermal performance meets the system's heat dissipation constraints under continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs designed for efficient power switching. The 'AU' designation typically indicates an integrated isolated gate driver or specific automotive packaging variant within Infineon's portfolio. It complements standard HEXFET devices by offering enhanced signal integrity for noisy automotive electrical systems.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon replacement guides for verified equivalents.