AUIRLR3636

Description：MOSFET N-CH 60V 50A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:17541de47aba Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRLR3636 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 50A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLR3636

Description：MOSFET N-CH 60V 50A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：49 nC @ 4.5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：3779 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：143W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRLR3636

AUIRLR3636

Single FETs, MOSFETs Overview

The AUIRLR3636 is an automotive-grade N-channel HEXFET power MOSFET in a D-Pak (TO-252AA) package. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 99A at 25°C case temperature, limited to 50A by the package. The device exhibits ultra-low on-resistance with typical values of 5.4mΩ at VGS=10V and 6.6mΩ at VGS=4.5V. It supports a junction temperature range from -55°C to +175°C and includes repetitive avalanche capability up to Tjmax.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Logic level gate drive for efficient control
Repetitive avalanche allowed up to maximum junction temperature
Lead-free and RoHS compliant construction

Single FETs, MOSFETs Applications

Automotive power switching applications
Low side load switching
DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging format. Standard packs are available in tubes or tape and reel configurations. Ensure compliance with automotive qualification requirements specified in the datasheet before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and low conduction losses are required. The logic level gate drive allows direct interfacing with standard microcontrollers. Consider the 50A package-limited current rating for thermal management design rather than the silicon-limited 99A rating.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The device is designed specifically for automotive applications requiring high efficiency and reliability under varying thermal conditions.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's cross-reference tools for verified substitutes. Ensure any replacement matches the D-Pak package dimensions and meets the same AEC-Q101 automotive qualification standards.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is 99A based on silicon limitations at a case temperature of 25°C. However, the package limits this current to 50A.