AUIRLZ24NS

Description：MOSFET N-CH 55V 18A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:5021acf03448 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRLZ24NS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 18A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLZ24NS

Description：MOSFET N-CH 55V 18A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：480 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.8W (Ta), 45W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRLZ24NS

AUIRLZ24NS

Single FETs, MOSFETs Overview

The AUIRLZ24NS is an automotive-grade N-channel HEXFET power MOSFET in a D2PAK package. It features a maximum drain-source voltage of 55 V and a continuous drain current of 18 A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.06 Ω at 10 V gate drive. It supports a junction operating temperature up to 175°C, fast switching characteristics, and repetitive avalanche capability up to Tjmax.

Single FETs, MOSFETs Feature Summary

Automotive qualified for high reliability applications
Logic level gate drive compatibility
Fast switching speed with improved repetitive avalanche rating

Single FETs, MOSFETs Applications

Automotive power distribution systems
Motor control circuits
High-side or low-side switching loads

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and reel specifications. Ensure the component meets required automotive qualification standards before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust automotive-grade performance with logic-level interface capabilities. Consider thermal management requirements given the 175°C junction limit and ensure gate drive voltages align with the specified logic level thresholds.

Single FETs, MOSFETs Part Context

This part belongs to the AUIRLZ series of automotive power MOSFETs designed by Infineon Technologies. It utilizes advanced planar technology to achieve low on-resistance per silicon area, making it suitable for efficient power switching in demanding environments.