BA782-HG3-18

RF Diode Overview

The BA782-HG3-18 is a silicon epitaxial planar band switching diode designed for electric bandswitching in radio and TV tuners within the 50 to 1000 MHz frequency range. It features a constant, very small dynamic forward resistance over a wide range of frequencies and forward currents, alongside a reverse capacitance that remains small and largely independent of reverse voltage. The component operates with a maximum reverse voltage of 35 V and a continuous forward current of 100 mA. Key electrical parameters include a typical forward voltage of 1000 mV at 100 mA, a maximum reverse current of 50 nA at 20 V, and a series inductance of 2.5 nH.

RF Diode Feature Summary

• AEC-Q101 qualified for automotive reliability
• Green material composition compliant with environmental standards
• Low dynamic forward resistance across broad frequency bands
• Stable reverse capacitance independent of reverse voltage

RF Diode Applications

• Electric bandswitching in radio tuners
• Bandswitching in television tuners
• RF circuit applications between 50 and 1000 MHz

RF Diode Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm package type and reel specifications. Ensure the selected variant matches the required AEC-Q101 qualification status and green material compliance. Cross-reference the part number with the manufacturer's latest datasheet to validate active status and availability before procurement.

RF Diode Selection Notes

Select this component when low dynamic forward resistance and stable capacitance are critical for RF bandswitching applications. Consider the SOD-123 package constraints and thermal characteristics for high-frequency operation. Verify that the 35 V reverse voltage rating aligns with the circuit requirements and that the 125 °C junction temperature limit suits the operating environment.

RF Diode Part Context

The BA782-HG3-18 belongs to the BA782/BA783 family of band switching diodes manufactured by Vishay Semiconductors. This family is specifically engineered for high-frequency switching tasks in communication equipment. The HG3 suffix denotes an AEC-Q101 qualified, green version of the device, distinguishing it from commercial grade variants.

RF Diode Replacement Considerations

Direct substitutes within the same family include the BA783-HG3-18, which shares similar packaging but exhibits different dynamic forward resistance values. Commercial grade equivalents such as the BA782-G3-18 offer identical electrical performance without automotive qualification.