RF Diode BA979-GS18 product image

BA979-GS18

  • Description:DIODE PIN 30V SOD80 QUADROMELF
  • Series:-

SKU:85b3dd4782d6 Category: Brand:

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BA979-GS18 is listed in the RF Diode range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE PIN 30V SOD80 QUADROMELF. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BA979-GS18

  • Description:DIODE PIN 30V SOD80 QUADROMELF
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):30V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.5pF @ 0V, 100MHz
  • Resistance @ If, F:50Ohm @ 1.5mA, 100MHz
  • Power Dissipation (Max):-
  • Operating Temperature:125°C (TJ)
  • Package / Case:SOD-80 Variant
  • Supplier Device Package:SOD-80 QuadroMELF
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BA979-GS18

BA979-GS18

RF Diode Overview

The BA979 is a single silicon RF PIN diode manufactured by Vishay Semiconductors, housed in the QuadroMELF SOD-80 surface-mount package. It operates within a wide frequency range of 10 MHz to 1 GHz and is qualified under AEC-Q101 standards. Key electrical parameters include a maximum reverse voltage of 30 V and a forward continuous current rating of 50 mA. At 25 °C, it exhibits a typical diode capacitance of 0.5 pF at 100 MHz with zero bias, and a differential forward resistance of 50 Ω at 100 MHz with 1.5 mA forward current. The device supports a junction temperature up to 125 °C and features a minority carrier lifetime of 4 μs.

RF Diode Feature Summary

  • AEC-Q101 automotive qualification for enhanced reliability
  • QuadroMELF SOD-80 glass case construction
  • Low leakage current and high reverse impedance
  • RoHS compliant and halogen-free material categorization

RF Diode Applications

  • Current controlled HF resistance in adjustable attenuators

RF Diode Procurement Notes

Verify the specific ordering suffix (GS18 or GS08) against the required reel size and tape width before purchase. Confirm that the component meets RoHS Directive 2011/65/EU requirements if applicable to your manufacturing process. Ensure storage conditions remain within the specified -55 °C to +150 °C range to maintain device integrity prior to assembly.

RF Diode Selection Notes

Select the BA979 variant when a reverse impedance greater than 5 kΩ is required at 100 MHz. If a higher reverse impedance exceeding 9 kΩ is necessary for the circuit design, choose the BA979S version instead. Both variants share identical mechanical dimensions and thermal characteristics but differ in their reverse impedance specifications.

RF Diode Part Context

This component belongs to the Vishay RF PIN Diodes series designed for single-diode applications in the QuadroMELF SOD-80 package. It is engineered for high-frequency signal processing tasks where low capacitance and precise resistance control are critical. The product line includes variants differentiated primarily by their reverse impedance values to suit various attenuation requirements.

RF Diode Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

BA979-GS18BA979-GS18

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