BAP50-04W,115

RF Diode Overview

The BAP50-04W is a silicon PIN diode featuring two planar elements in series configuration, housed in a SOT323 small surface-mount plastic package. It offers low diode capacitance and forward resistance for RF applications. Key electrical parameters include a continuous reverse voltage of 50 V and a continuous forward current of 50 mA per diode. Total power dissipation is rated at 240 mW with a junction-to-soldering point thermal resistance of 250 K/W. At 1 MHz and 0 V reverse bias, typical capacitance is 0.45 pF. Forward voltage is typically 0.95 V at 50 mA. Series inductance is 1.60 nH at 100 MHz.

RF Diode Feature Summary

• Two planar PIN diodes integrated in a single series configuration within a compact SMD package.
• Low diode capacitance suitable for high-frequency signal switching.
• Low diode forward resistance to minimize insertion loss.

RF Diode Applications

• General RF application

RF Diode Procurement Notes

Verify the component marking code '6W%' on the device body to confirm authenticity against the official NXP datasheet. Ensure the package type matches the SOT323 outline dimensions. Confirm that the application requirements do not exceed the absolute maximum ratings, specifically the 50 V reverse voltage and 50 mA forward current limits per diode element.

RF Diode Selection Notes

Select this component when a dual-series PIN diode structure is required in a minimal footprint. The SOT323 package is appropriate for space-constrained designs. Evaluate the capacitance values at specific operating voltages to ensure they meet the isolation requirements of the target RF circuit. Consider the thermal resistance if high power dissipation is anticipated.

RF Diode Part Context

The BAP50-04W belongs to the BAP50 family of silicon PIN diodes manufactured by NXP Semiconductors. This family includes variants such as BAP50-03 and BAP50-04, which share similar core technologies but may differ in pin configurations or specific electrical characteristics. The BAP50-04W specifically utilizes the SOT323 package.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source document. Cross-referencing with other BAP50 family members like BAP50-03 requires verification of pinout compatibility and electrical parameter alignment.

RF Diode FAQ

What is the pin configuration of the BAP50-04W?

Pin 1 is the anode, Pin 2 is the cathode, and Pin 3 is the common connection between the two series diodes.

What is the typical diode capacitance at 1 MHz?

At 1 MHz and 0 V reverse voltage, the typical diode capacitance is 0.45 pF.

What is the maximum total power dissipation?

The total power dissipation is 240 mW, provided the soldering point temperature does not exceed 90 °C.