BAP51-06W,115

RF Diode Overview

The BAP51-06W is a silicon PIN diode featuring two planar elements in a common anode configuration, housed in an SOT323 small surface-mount plastic package. It is qualified to AEC-Q101 standards for automotive reliability. Key electrical parameters include a maximum reverse voltage of 50 V and a maximum forward current of 50 mA. The device exhibits low diode capacitance, ranging from 0.2 pF to 0.55 pF depending on bias conditions, and low forward resistance, typically 1.5 Ω at 10 mA. Total power dissipation is rated at 240 mW with a junction-to-solder point thermal resistance of 250 K/W.

RF Diode Feature Summary

• Two planar PIN diodes integrated in a common anode configuration within a compact SMD package
• AEC-Q101 qualification ensuring suitability for automotive applications
• Low diode capacitance and low forward resistance optimized for RF signal switching

RF Diode Applications

• General RF applications
• Automotive electronics systems

RF Diode Procurement Notes

Verify the specific ordering suffix (e.g., 115) against the manufacturer's official documentation to confirm reel size or tape-and-reel specifications. Ensure the component meets the required AEC-Q101 automotive qualification standards if deployed in vehicle systems. Cross-reference the SOT323 package dimensions with PCB footprint requirements prior to procurement.

RF Diode Selection Notes

Select this component when a dual-diode solution with a shared anode terminal is required in space-constrained designs. The SOT323 package offers a small footprint suitable for high-density mounting. Consider the 50 V reverse voltage and 50 mA forward current limits to ensure operation remains within absolute maximum ratings during circuit design.

RF Diode Part Context

This part belongs to NXP's portfolio of silicon PIN diodes designed for radio frequency applications. The BAP51 series provides solutions for attenuators and switches. The BAP51-06W specifically utilizes the SOT323 package, distinguishing it from other variants that may use different form factors while maintaining similar electrical characteristics.

RF Diode Replacement Considerations

Check for direct substitutes such as the BAP51-05W or BAP51LX, noting differences in pin count and package type (UMT vs. SOD-882). Verify that any replacement maintains the common anode configuration and AEC-Q101 qualification if automotive compliance is mandatory.

RF Diode FAQ

What is the typical charge carrier lifetime for the BAP51-06W?

The typical charge carrier lifetime is 0.55 µs, measured under specific bias conditions where IF = 10 mA and IR = 6 mA.

How does the diode capacitance vary with reverse voltage?

At 1 MHz, the typical capacitance decreases as reverse voltage increases: approximately 0.4 pF at 0 V, 0.3 pF at 1 V, and 0.2 pF at 5 V.

What is the isolation performance at 2450 MHz?

The typical isolation at 2450 MHz is -12 dB when the diode is zero-biased.