RF Diode BAP64-04,215 product image

BAP64-04,215

$0.34
  • Description:RF DIODE PIN 175V 250MW SOT-23
  • Series:-

SKU:d78b4471c1c9 Category: Brand:

  
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BAP64-04,215 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF DIODE PIN 175V 250MW SOT-23. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP64-04,215

  • Description:RF DIODE PIN 175V 250MW SOT-23
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):175V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.35pF @ 20V, 1MHz
  • Resistance @ If, F:1.35Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23 (TO-236AB)
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAP64-04,215

BAP64-04,215

RF Diode Overview

The BAP64-04 is a silicon PIN diode featuring two planar diodes in series configuration, housed in a SOT23 small plastic surface-mounted device package. It is designed for high voltage and current-controlled RF applications up to 3 GHz. Key electrical parameters include a maximum reverse voltage of 175 V and a forward current rating of 100 mA per diode. At 25 °C junction temperature, the typical forward voltage is 0.95 V at 50 mA. Diode capacitance ranges from 0.23 pF to 0.52 pF depending on reverse bias, while forward resistance varies from 0.7 Ω to 40 Ω based on current levels.

RF Diode Feature Summary

  • High voltage and current controlled operation suitable for RF attenuators and switches
  • Low diode capacitance and low series inductance for high-frequency performance
  • AEC-Q101 qualified for automotive application reliability

RF Diode Applications

  • RF attenuators
  • RF switches

RF Diode Procurement Notes

Verify the specific ordering suffix to confirm the exact package variant and marking code. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive designs. Ensure the design accounts for the absolute maximum ratings, particularly the 175 V reverse voltage limit and 250 mW total power dissipation constraints.

RF Diode Selection Notes

Select this component when a compact SOT23 package is required for series PIN diode configurations in RF circuits. The device supports frequencies up to 3 GHz with low parasitic inductance. Consider the thermal resistance of 220 K/W and the 250 mW power dissipation limit during layout planning to ensure reliable operation under specified load conditions.

RF Diode Part Context

This part belongs to NXP Semiconductors' silicon PIN diode family, specifically designed for radio frequency signal control. The BAP64-04 variant utilizes a series configuration within a single SOT23 package, offering a space-saving solution compared to discrete components. It serves as a specialized passive component for managing RF signal paths in communication systems.

RF Diode Replacement Considerations

Check datasheets for alternative PIN diodes in SOT23 packages with comparable reverse voltage ratings and capacitance values. Verify that any substitute maintains similar series inductance and forward resistance characteristics to ensure circuit performance remains within specifications.

RF Diode FAQ

What is the maximum reverse voltage rating for the BAP64-04?

The maximum reverse voltage (VR) is rated at 175 V.

How many leads does the BAP64-04 package have?

The BAP64-04 is housed in a SOT23 package which has three leads.

Is the BAP64-04 qualified for automotive use?

Yes, the BAP64-04 is AEC-Q101 qualified.

BAP64-04,215BAP64-04,215
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