RF Diode BAP70-03,115 product image

BAP70-03,115

$0.33
  • Description:RF DIODE PIN 50V 500MW SOD-323
  • Series:-

SKU:4172b764fb84 Category: Brand:

  
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BAP70-03,115 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF DIODE PIN 50V 500MW SOD-323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP70-03,115

  • Description:RF DIODE PIN 50V 500MW SOD-323
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.25pF @ 20V, 1MHz
  • Resistance @ If, F:1.9Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):500 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Package / Case:SC-76, SOD-323
  • Supplier Device Package:SOD-323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAP70-03,115

BAP70-03,115

RF Diode Overview

The NXP BAP70-03 is a planar silicon PIN diode housed in an SOD323 (SC-76) surface-mount package. It functions as a high-voltage, current-controlled RF resistor with low capacitance and very low series inductance. Key electrical parameters include a maximum continuous reverse voltage of 50 V and a forward current rating of 100 mA. At 25 °C, the typical junction-to-solder point thermal resistance is 120 K/W. Diode capacitance ranges from 200 fF to 700 fF depending on reverse bias, while forward resistance varies significantly with current levels.

RF Diode Feature Summary

  • High voltage current controlled RF resistor for attenuators
  • Low diode capacitance
  • Very low series inductance

RF Diode Applications

  • RF attenuators
  • (SAT) TV
  • Car radio

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and compliance status. The base part number BAP70-03 indicates the component type, but suffixes define physical handling configurations. Ensure the source document matches the exact part number variant required for your design specifications before finalizing procurement.

RF Diode Selection Notes

Select this component for applications requiring precise RF attenuation control via current modulation. Evaluate the forward resistance characteristics at your target operating current to ensure adequate signal control. Consider the low parasitic inductance and capacitance for high-frequency performance. Verify that the thermal resistance and power dissipation limits accommodate your circuit's heat generation under continuous operation conditions.

RF Diode Part Context

The BAP70-03 is a discrete silicon PIN diode designed for radio frequency applications. It utilizes a planar technology structure within a compact plastic surface-mount package. This device serves as a variable resistor where the resistance is modulated by the applied forward current, enabling dynamic control of RF signal paths in communication systems.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's official resources for qualified alternatives or cross-reference lists if replacement is necessary.

BAP70-03,115BAP70-03,115
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