BAR 64-05W H6433

RF Diode Overview

The BAR64-05W H6433 is a silicon PIN diode from Infineon Technologies, housed in an SOT323 package with a common cathode configuration. It operates as a high-voltage current-controlled RF resistor for frequencies ranging from above 1 MHz up to 6 GHz. Key electrical parameters include a maximum reverse voltage of 150 V and a forward current rating of 100 mA. The device exhibits very low capacitance, typically 0.17 pF at zero volt reverse bias above 1 GHz, and a low forward resistance of approximately 2.1 Ω at 10 mA. It supports a junction temperature up to 150 °C and complies with AEC-Q101 qualification standards.

RF Diode Feature Summary

• Functions as a high-voltage current-controlled RF resistor suitable for attenuator and switch applications
• Provides very low signal distortion across the operational frequency range
• Features extremely low capacitance at zero volt reverse bias for high-frequency performance

RF Diode Applications

• RF attenuators
• RF switches
• Frequency range applications above 1 MHz up to 6 GHz

RF Diode Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix matches the required marking and packaging specifications. Ensure compliance with RoHS requirements and check for any end-of-life status updates prior to finalizing procurement plans.

RF Diode Selection Notes

Select this component when designing circuits requiring a common cathode PIN diode in an SOT323 package. Consider the 150 V reverse voltage limit and 100 mA forward current capability. Evaluate thermal resistance characteristics relative to the expected operating temperature and power dissipation constraints within the target application environment.

RF Diode Part Context

This part belongs to the BAR64 series of silicon PIN diodes manufactured by Infineon Technologies. The series includes various configurations such as single, series, parallel pair, common anode, and common cathode setups. The BAR64-05W specifically utilizes the SOT323 package and offers a common cathode arrangement optimized for RF control applications.

RF Diode Replacement Considerations

BAR6405WH6327XTSA1

RF Diode FAQ

What is the typical capacitance value at zero volt reverse bias?

The typical capacitance is 0.17 pF at frequencies above 1 GHz under zero volt reverse bias conditions.

Is this component qualified for automotive applications?

Yes, the BAR64-05W is qualified according to the AEC-Q101 standard.

What is the maximum junction temperature?

The maximum junction temperature (Tj) is 150 °C.