RF Diode BAR6305WE6327HTSA1 product image

BAR6305WE6327HTSA1

  • Description:RF DIODE PIN 50V 250MW PG-SOT323
  • Series:-

SKU:53da4a03901e Category: Brand:

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BAR6305WE6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 50V 250MW PG-SOT323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAR6305WE6327HTSA1

  • Description:RF DIODE PIN 50V 250MW PG-SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - 1 Pair Common Cathode
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.3pF @ 5V, 1MHz
  • Resistance @ If, F:1Ohm @ 10mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAR6305WE6327HTSA1

BAR6305WE6327HTSA1

RF Diode Overview

The BAR6305WE6327HTSA1 is a dual PIN diode array manufactured by Infineon Technologies, housed in a PG-SOT323 (SC-70) surface-mount package. It features a common cathode configuration with a maximum repetitive peak reverse voltage of 50V and a maximum forward current of 100mA. The device supports a power dissipation of 250mW and operates within a junction temperature range up to 150°C. Designed for RF applications, it provides reliable switching performance in a compact footprint suitable for space-constrained electronic designs.

RF Diode Feature Summary

  • Dual PIN diode structure configured as a common cathode pair
  • Optimized for radio frequency signal switching and attenuation
  • Compact SMD packaging facilitating automated surface-mount assembly

RF Diode Applications

  • RF signal switching circuits
  • Variable attenuator networks
  • Phase shifters in communication systems

RF Diode Procurement Notes

This component is officially classified as obsolete and no longer manufactured by Infineon Technologies. Procurement must rely on existing distributor stock or secondary market channels. Verify authenticity through authorized sources due to potential availability of refurbished units. Confirm end-of-life status prior to integration into new production designs to avoid supply chain disruptions.

RF Diode Selection Notes

Engineers should evaluate the 50V reverse voltage limit and 100mA current rating against circuit requirements. The common cathode topology simplifies biasing for differential RF paths. Consider thermal management for the 250mW dissipation capability in high-density layouts. Alternative components may be required for new designs given the obsolete status.

RF Diode Part Context

Part of the BAR63 series of RF PIN diodes from Infineon Technologies. The suffix WE6327HTSA1 denotes specific tape-and-reel packaging and manufacturing lot details. This component belongs to the broader category of semiconductor diodes used for high-frequency control applications.

RF Diode Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, direct pin-compatible replacements require independent verification against electrical specifications and package dimensions.

BAR6305WE6327HTSA1BAR6305WE6327HTSA1

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