BAS40SW-AU_R1_000A1

Diode Arrays Overview

The BAS40SW-AU_R1_000A1 is a silicon Schottky barrier rectifier manufactured by Panjit International Inc. It features a maximum repetitive peak reverse voltage of 40V and an average forward rectified current of 0.2A at 25°C. The device utilizes a surface-mount SOT-23 plastic package with terminals solderable per MIL-STD-750. It holds AEC-Q101 qualification for automotive applications and complies with RoHS directives.

Diode Arrays Feature Summary

• Schottky barrier construction provides fast switching speed and high conductor efficiency.
• Automotive grade reliability confirmed through AEC-Q101 qualification standards.
• Surface mount SOT-23 package design supports automated insertion processes.

Diode Arrays Applications

• Automotive electronics circuits requiring low forward voltage drop
• General purpose rectification in consumer electronic devices
• DC-DC converter output stages

Diode Arrays Procurement Notes

Verify the specific suffix AU_R1_000A1 against official Panjit documentation to confirm packaging configuration and compliance status. Ensure the ordering quantity aligns with manufacturer reel specifications. Confirm AEC-Q101 certification requirements match project needs before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component for applications requiring a compact Schottky rectifier with automotive qualification. The 40V rating suits low-voltage DC systems. Verify thermal management capabilities within the SOT-23 package constraints for the intended operating temperature range.

Diode Arrays Part Context

This part belongs to the BAS40 series of surface mount Schottky diodes from Panjit. The series is designed for general-purpose rectification with emphasis on small form factor integration. The BAS40SW variant specifically denotes the SOT-23 package style within this product line.

Diode Arrays Replacement Considerations

Cross-reference with other 40V 0.2A Schottky diodes in SOT-23 packages. Verify pinout compatibility and electrical parameter equivalence, particularly forward voltage and reverse leakage current, before substituting.