RF Diode BAT 63-02V E6327 product image

BAT 63-02V E6327

$0.10
  • Description:RF DIODE SCHOTTKY 3V 100MW SC79
  • Series:-

SKU:96a69aa122c3 Category: Brand:

  
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BAT 63-02V E6327 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE SCHOTTKY 3V 100MW SC79. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT 63-02V E6327

  • Description:RF DIODE SCHOTTKY 3V 100MW SC79
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):3V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.85pF @ 0.2V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):100 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-79, SOD-523
  • Supplier Device Package:PG-SC79-2
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAT 63-02V E6327

BAT 63-02V E6327

RF Diode Overview

The BAT 63-02V E6327 is a silicon Schottky diode designed for high-speed applications and zero-bias detection up to GHz frequencies. It features a single-diode configuration housed in an SC79 surface-mount package with a maximum reverse voltage of 3 V and a forward current rating of 100 mA. The device exhibits a typical forward voltage of 190 mV at 1 mA and a capacitance of 0.65 pF at 0.2 V reverse bias. Operating within a temperature range of -55°C to +150°C, it offers low barrier characteristics suitable for RF signal detection.

RF Diode Feature Summary

  • Low barrier design optimized for detector applications operating at GHz frequencies
  • Zero bias detector capability enabling efficient RF signal detection without external power
  • High-speed performance suited for rapid switching and sensitive detection tasks

RF Diode Applications

  • RF mixer circuits requiring low barrier characteristics
  • Signal detection and power leveling systems
  • Zero-bias detector diodes in communication equipment

RF Diode Procurement Notes

Verify component authenticity by checking the marking code 'd' on the SC79 package against official Infineon date code tables. Confirm RoHS compliance status through the manufacturer's documentation before integration into production lines.

RF Diode Selection Notes

Select this component when a single Schottky diode with a 3 V reverse voltage limit is required for GHz frequency detection. Ensure the SC79 package footprint matches the PCB layout constraints and that the 100 mA forward current rating satisfies the circuit load requirements.

RF Diode Part Context

This part belongs to the BAT63 series of silicon Schottky diodes manufactured by Infineon Technologies. The series includes variants like the BAT63-07W, which differs in package type and internal configuration while sharing similar low-barrier semiconductor properties for high-frequency applications.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters if considering alternative manufacturers for the SC79 package.

RF Diode FAQ

What is the maximum reverse voltage rating for the BAT 63-02V?

The maximum diode reverse voltage (VR) rating is 3 V.

What package type does the BAT 63-02V use?

The BAT 63-02V utilizes the SC79 surface-mount package.

What is the typical forward voltage at 1 mA?

The typical forward voltage (VF) is 190 mV when measured at a forward current of 1 mA.

BAT 63-02V E6327BAT 63-02V E6327
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