RF Diode BAT1502LRHE6327XTSA1 product image

BAT1502LRHE6327XTSA1

$0.99
  • Description:RF DIODE SCHOTTKY 4V 100MW TSLP2
  • Series:-

SKU:39326e67eca7 Category: Brand:

  
  • Quantity
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BAT1502LRHE6327XTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE SCHOTTKY 4V 100MW TSLP2. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT1502LRHE6327XTSA1

  • Description:RF DIODE SCHOTTKY 4V 100MW TSLP2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):4V
  • Current - Max:110 mA
  • Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):100 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SOD-882
  • Supplier Device Package:PG-TSLP-2-7
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAT1502LRHE6327XTSA1

BAT1502LRHE6327XTSA1

RF Diode Overview

The BAT1502LRHE6327XTSA1 is a silicon Schottky diode manufactured by Infineon Technologies, designed for surface-mount applications. It features a single configuration with a maximum repetitive reverse voltage of 4 V and a forward current rating of 110 mA. The device exhibits a low forward voltage of 320 mV and a reverse leakage current of 5 uA. Operating temperatures range from -55 C to +150 C, with a power dissipation capacity of 100 W. Packaged in SMD/SMT formats including Reel, Cut Tape, and MouseReel, it belongs to the BAT15 series.

RF Diode Feature Summary

  • Utilizes silicon technology for reliable Schottky rectification
  • Optimized for low forward voltage drop to enhance efficiency
  • Supports high-temperature operation up to 150 C

RF Diode Applications

  • General-purpose RF diodes
  • Low-voltage rectification circuits
  • Signal processing applications requiring fast switching

RF Diode Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions align with semiconductor handling standards to prevent moisture sensitivity damage during assembly processes.

RF Diode Selection Notes

Select this component for designs requiring a 4 V reverse voltage limit and 110 mA forward current capability. The SMD/SMT package options facilitate automated surface-mount assembly. Consider the 150 C maximum junction temperature for thermal management in compact enclosures where heat dissipation is constrained.

RF Diode Part Context

This part belongs to the Infineon BAT15 series of Schottky diodes. The suffix E6327 indicates specific packaging and ordering information managed by the manufacturer. It serves as a discrete solution within the broader Diodes & Rectifiers product category, targeting applications needing efficient low-voltage conversion.

RF Diode Replacement Considerations

Cross-reference with other BAT15 series variants such as BAT1504W for dual configurations. Verify pinout compatibility and electrical parameter overlaps before substituting. Consult official Infineon replacement guides for qualified alternatives.

BAT1502LRHE6327XTSA1BAT1502LRHE6327XTSA1
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