BAT1902ELE6327XTMA1

RF Diode Overview

The BAT1902ELE6327XTMA1 is a silicon Schottky barrier diode manufactured by Infineon Technologies, designed for radio frequency applications. It features a single configuration housed in a TSLP-2 surface-mount package. Key electrical specifications include a maximum repetitive reverse voltage of 4 V and a forward current rating of 110 mA. The device exhibits a low forward voltage of 320 mV and a reverse leakage current of 5 uA. Power dissipation is rated at 100 mW, with an operating temperature range spanning from -55 C to +150 C.

RF Diode Feature Summary

• Utilizes silicon Schottky technology for efficient RF signal handling
• Features a compact TSLP-2 surface-mount package for automated assembly
• Provides low forward voltage characteristics suitable for sensitive circuits

RF Diode Applications

• RF detection circuits
• High-frequency switching applications
• Signal processing in communication systems

RF Diode Procurement Notes

Verify the specific ordering suffix ELE6327XTMA1 against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead-free requirements directly with the manufacturer or authorized distributors prior to procurement. Ensure that the component's moisture sensitivity level and storage conditions align with your manufacturing timeline to prevent package degradation during assembly processes.

RF Diode Selection Notes

Select this component when a low-voltage, high-speed Schottky diode is required for RF environments. The 4 V reverse voltage limit dictates suitability for low-power signal paths rather than power rectification. Consider the TSLP-2 footprint constraints and thermal management capabilities relative to the 100 mW power dissipation rating. Compare performance metrics such as forward voltage and leakage current against alternative RF diodes to ensure compatibility with system impedance and noise requirements.

RF Diode Part Context

This part belongs to the BAT19 series of RF Schottky diodes from Infineon Technologies. The series is engineered for high-frequency performance, distinguishing it from standard rectifier diodes. The specific model integrates silicon Schottky junction technology optimized for minimal capacitance and fast switching speeds. It serves as a specialized solution within the broader diode portfolio, targeting niche applications where standard general-purpose diodes lack the necessary speed or voltage characteristics.

RF Diode Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.