BBS3002-DL-E

Single FETs, MOSFETs Overview

The BBS3002-DL-E is a P-Channel Power MOSFET manufactured by onsemi, designed for surface-mount applications in the TO-263 package. It features a drain-source voltage (VDS) of -60V and a continuous drain current (ID) of -100A at case temperature. The device exhibits a typical on-resistance (RDS(on)) of 4.4mΩ at VGS = 10V, with a maximum specified value of 5.8mΩ. It supports operation with gate drive voltages down to 4V. Key electrical parameters include an input capacitance (Ciss) of 13,200pF (typical) and a power dissipation rating of 90W at case temperature.

Single FETs, MOSFETs Feature Summary

• High current handling capability with -100A continuous drain current rating
• Low on-resistance for improved efficiency in power switching applications
• Compatible with low-voltage logic-level gate drive signals starting at 4V
• Robust thermal performance suitable for high-power density designs

Single FETs, MOSFETs Applications

• DC-DC converter output stages
• Motor control circuits
• Power distribution units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against the manufacturer's latest datasheet to confirm exact electrical tolerances and packaging variations. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Cross-reference the part number with official onsemi databases to avoid counterfeit components or obsolete stock substitutions.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with -60V blocking capability and high current capacity is required. Consider the TO-263 package for its balance of thermal dissipation and surface-mount convenience. Evaluate the 4V drive compatibility if interfacing with lower voltage logic controllers. Verify thermal management requirements given the 90W power dissipation rating at case temperature.

Single FETs, MOSFETs Part Context

This component belongs to the BBS3002 series of single N-channel and P-channel power MOSFETs from onsemi. The series is engineered for high-efficiency power conversion and switching applications. The BBS3002-DL-E specifically addresses the need for robust P-Channel solutions in compact form factors, offering superior on-resistance characteristics compared to previous generations.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other -60V P-Channel MOSFETs in TO-263 packages with comparable ID and RDS(on) ratings. Verify pinout compatibility and thermal resistance values before substitution. Check for equivalent gate charge specifications to ensure similar switching performance in the target circuit.