Single FETs, MOSFETs BCV26-QR product image

BCV26-QR

$0.04
  • Description:BCV26-Q/SOT23/TO-236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)

SKU:8c2ef53dbfc9 Category: Brand:

  
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BCV26-QR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is BCV26-Q/SOT23/TO-236AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BCV26-QR

  • Description:BCV26-Q/SOT23/TO-236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

Single FETs, MOSFETs datasheet and documents for BCV26-QR

BCV26-QR

Single FETs, MOSFETs Overview

The BCV26-QR is a PNP Darlington transistor manufactured by Nexperia, housed in the SOT-23 (TO-236AB) surface-mount device plastic package. It serves as the PNP complement to the NPN BCV47 device. The component is qualified under the AEC-Q101 standard for automotive applications. Key electrical characteristics include a maximum collector-emitter voltage of 80 V and a maximum collector-base voltage of 90 V. The emitter-base reverse voltage is rated at 5 V. The device supports a maximum continuous DC collector current of 500 mA with a power dissipation capability of 250 mW. It operates within a temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • High current gain suitable for amplification requirements
  • AEC-Q101 qualified for automotive reliability standards
  • Designed for general audio frequency applications

Single FETs, MOSFETs Applications

  • General audio frequency circuits
  • Applications requiring high signal amplification

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix QR against official Nexperia documentation to confirm packaging configuration and reel specifications. Ensure the selected variant meets the required AEC-Q101 qualification status if used in automotive contexts. Cross-reference the SOT-23 footprint dimensions with PCB layout guidelines to ensure mechanical compatibility during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a PNP Darlington configuration is required in a compact SOT-23 package. Consider the 80 V collector-emitter voltage rating and 500 mA current capacity relative to circuit demands. Verify that the 250 mW power dissipation limit accommodates thermal constraints in the target application environment.

Single FETs, MOSFETs Part Context

The BCV26-QR belongs to Nexperia's portfolio of Darlington transistors designed for small-signal amplification. It is part of a family that includes complementary NPN devices like the BCV47. The product line emphasizes high current gain and robustness for use in consumer electronics and automotive systems where space efficiency and signal integrity are critical design factors.

Single FETs, MOSFETs Replacement Considerations

The BCV47 is identified as the NPN complement. Direct substitution requires verifying pinout compatibility and ensuring the replacement device matches the required polarity and voltage ratings for the specific circuit topology.

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