BFL4001

$2.86

Description：MOSFET N-CH 900V 4.1A TO220FI
Series：-
Mfr：onsemi
Package：Bag,Bag

SKU:99087688b013 Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BFL4001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 900V 4.1A TO220FI. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BFL4001

Description：MOSFET N-CH 900V 4.1A TO220FI
Series：-
Mfr：onsemi
Package：Bag,Bag
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.7Ohm @ 3.25A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：850 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 37W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FI(LS)
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for BFL4001

BFL4001

Single FETs, MOSFETs Overview

The BFL4001 is an N-Channel Silicon MOSFET designed as a general-purpose switching device. It features a TO-220FI(LS) package with three terminals: Gate, Drain, and Source. The component supports a drain-to-source voltage of 900 V and a continuous drain current of 6.5 A at a case temperature of 150°C. At Tc=25°C under ideal heat dissipation conditions, the package-limited current is 4.1 A. The static drain-to-source on-state resistance is 2.7 Ω maximum at VGS=10V and ID=3.25A. The device guarantees avalanche resistance with a single pulse energy rating of 237 mJ.

Single FETs, MOSFETs Feature Summary

Low ON-resistance for efficient power handling
High-speed switching capability
Guaranteed avalanche resistance
Optimized for 10V gate drive

Single FETs, MOSFETs Applications

General-purpose switching in home appliances
AV equipment power management
Communication device circuits
Office equipment power supplies
Industrial equipment control systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin carefully, as the datasheet identifies SANYO Semiconductor Co.,Ltd. while the prompt specifies onsemi. Confirm the specific ordering number ENA1638 matches your supply chain requirements. Ensure the TO-220FI(LS) package variant aligns with your PCB footprint design. Check for any updated documentation versions that may supersede the March 2010 release date provided in the source material.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-Channel MOSFET with robust avalanche tolerance is required. The 900V rating suits applications demanding significant voltage isolation. The 10V drive specification dictates compatible gate driver selection. Consider the thermal characteristics, specifically the allowable power dissipation limits relative to case temperature, for proper heatsinking design in your target application environment.

Single FETs, MOSFETs Part Context

This part is categorized as a general electronics component intended for standard applications rather than special high-reliability uses like aerospace or medical life-support systems. The datasheet explicitly states it is not guaranteed for performance when mounted in customer products without independent verification. It falls under the broader category of silicon MOSFETs used for switching functions.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult official distributor databases or manufacturer cross-reference tools for verified alternatives. Ensure any replacement maintains the 900V breakdown voltage and TO-220FI(LS) package compatibility.

Single FETs, MOSFETs FAQ

What is the maximum single pulse avalanche energy?

The single pulse avalanche energy (EAS) is rated at 237 mJ under conditions of VDD=99V, L=10mH, and IAV=6.5A.

Is this device suitable for nuclear control devices?

No, the product is not intended for special applications such as nuclear control devices, aerospace instruments, or medical equipment requiring extremely high reliability.