BFL4004

Single FETs, MOSFETs Overview

The BFL4004-1E is an N-channel Power MOSFET manufactured by onsemi, designed for high-voltage switching applications. It features a maximum drain-source voltage of 800V and a continuous drain current of 4.3A at case temperature. The device exhibits a typical on-resistance of 2.5 ohms at 10V gate drive and 3.25A drain current. Key electrical characteristics include a total gate charge of 36nC and an input capacitance of 710pF at 30V. Thermal performance specifies a power dissipation of 36W at the case and 2W at ambient temperature, with a junction temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

• High breakdown voltage capability suitable for demanding power conversion topologies
• Optimized low on-resistance for improved conduction efficiency
• Robust thermal design supporting high-power dissipation in through-hole packages

Single FETs, MOSFETs Applications

• High-voltage DC-DC converter circuits
• Industrial motor control systems
• Uninterruptible power supply (UPS) inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation, such as -1E or -1EX, as these indicate distinct package variants like TO-220F-3FS or TO-220-3 FP. Confirm availability status, as certain revisions may be discontinued. Ensure the selected component matches the required thermal and electrical specifications for the target application before procurement.

Single FETs, MOSFETs Selection Notes

Select this component based on the 800V rating and 4.3A current capacity requirements. Consider the TO-220F package for adequate heat sinking in high-power scenarios. Evaluate the gate charge and on-resistance trade-offs against the driving circuit capabilities to ensure efficient switching performance within the system constraints.

Single FETs, MOSFETs Part Context

This part belongs to the BFL40 series of N-channel MOSFETs from onsemi, which are engineered for high-voltage power management. The series offers various current ratings and package options to accommodate different thermal and spatial constraints in industrial and consumer power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 800V N-channel MOSFETs in the TO-220F package. Verify pinout compatibility and ensure equivalent or superior Rds(on), Vgs(th), and thermal resistance values to maintain circuit integrity during substitution.