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BGA7M1N6E6327XTSA1 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC AMP LTE 1.8GHZ-2.2GHZ TSNP6. Review the specifications below when checking this part for your BOM.
The BGA7M1N6E6327XTSA1 is an RF amplifier IC designed for LTE applications, operating within the 1.8 GHz to 2.2 GHz frequency range. Manufactured by Infineon Technologies, this surface-mount component utilizes a PG-TSNP-6-2 package. It features an input return loss of 10 dB and provides 21 dB of isolation. The device is engineered to support wireless communication systems requiring reliable signal amplification in the specified LTE bands.
Verify the exact package type PG-TSNP-6-2 against schematic footprints before integration. Confirm that the 1.8 GHz to 2.2 GHz operational range aligns with target LTE band requirements. Ensure compatibility with system voltage levels and thermal management strategies suitable for surface-mount installation in compact wireless modules.
Select this component when designing for LTE bands between 1.8 GHz and 2.2 GHz. The 10 dB input return loss indicates good impedance matching capabilities. Consider the 21 dB isolation figure for interference mitigation needs. This part is suitable for infrastructure roles where stable amplification in specific cellular bands is required.
This component belongs to Infineon's portfolio of RF amplifiers tailored for wireless infrastructure. It supports applications ranging from macro MIMO 5G base stations to smaller cellular units. The design focuses on providing efficient signal handling for modern telecommunications standards, specifically targeting LTE deployment scenarios.
Public confirmed substitute: BGA5H1BN6E6327XTSA1.
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