RF Amplifiers BGA7M1N6E6327XTSA1 product image

BGA7M1N6E6327XTSA1

$0.74
  • Description:IC AMP LTE 1.8GHZ-2.2GHZ TSNP6
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:0268eecea9b7 Category: Brand:

  
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BGA7M1N6E6327XTSA1 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC AMP LTE 1.8GHZ-2.2GHZ TSNP6. Review the specifications below when checking this part for your BOM.

RF Amplifiers specifications for BGA7M1N6E6327XTSA1

  • Description:IC AMP LTE 1.8GHZ-2.2GHZ TSNP6
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Frequency:1.8GHz ~ 2.2GHz
  • P1dB:-7dBm
  • Gain:13dB
  • Noise Figure:0.6dB
  • RF Type:LTE
  • Voltage - Supply:1.5V ~ 3.3V
  • Current - Supply:4.4mA
  • Test Frequency:-
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN
  • Supplier Device Package:PG-TSNP-6-2
  • Grade:-
  • Qualification:-

RF Amplifiers datasheet and documents for BGA7M1N6E6327XTSA1

BGA7M1N6E6327XTSA1

RF Amplifiers Overview

The BGA7M1N6E6327XTSA1 is an RF amplifier IC designed for LTE applications, operating within the 1.8 GHz to 2.2 GHz frequency range. Manufactured by Infineon Technologies, this surface-mount component utilizes a PG-TSNP-6-2 package. It features an input return loss of 10 dB and provides 21 dB of isolation. The device is engineered to support wireless communication systems requiring reliable signal amplification in the specified LTE bands.

RF Amplifiers Feature Summary

  • Designed specifically for LTE radio frequency amplification
  • Operates within the 1.8 GHz to 2.2 GHz frequency spectrum
  • Provides high isolation characteristics for signal integrity

RF Amplifiers Applications

  • LTE wireless communication base stations
  • Small cell infrastructure
  • Access point signal amplification

RF Amplifiers Procurement Notes

Verify the exact package type PG-TSNP-6-2 against schematic footprints before integration. Confirm that the 1.8 GHz to 2.2 GHz operational range aligns with target LTE band requirements. Ensure compatibility with system voltage levels and thermal management strategies suitable for surface-mount installation in compact wireless modules.

RF Amplifiers Selection Notes

Select this component when designing for LTE bands between 1.8 GHz and 2.2 GHz. The 10 dB input return loss indicates good impedance matching capabilities. Consider the 21 dB isolation figure for interference mitigation needs. This part is suitable for infrastructure roles where stable amplification in specific cellular bands is required.

RF Amplifiers Part Context

This component belongs to Infineon's portfolio of RF amplifiers tailored for wireless infrastructure. It supports applications ranging from macro MIMO 5G base stations to smaller cellular units. The design focuses on providing efficient signal handling for modern telecommunications standards, specifically targeting LTE deployment scenarios.

RF Amplifiers Replacement Considerations

Public confirmed substitute: BGA5H1BN6E6327XTSA1.

BGA7M1N6E6327XTSA1BGA7M1N6E6327XTSA1
$0.74
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