Single FETs, MOSFETs BS107P product image

BS107P

$0.85
  • Description:MOSFET N-CH 200V 120MA TO92-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk

SKU:ea06ec195532 Category: Brand:

  
  • Quantity
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BS107P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 200V 120MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BS107P

  • Description:MOSFET N-CH 200V 120MA TO92-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.6V, 5V
  • Rds On (Max) @ Id, Vgs:30Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-92
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)

Single FETs, MOSFETs datasheet and documents for BS107P

BS107P

Single FETs, MOSFETs Overview

The BS107P is a 200V N-channel enhancement mode vertical DMOSFET manufactured by Diodes Incorporated. It features a maximum continuous drain current of 120mA and a static drain-source on-resistance of 23Ω at VGS=2.6V. The device operates within a temperature range of -55°C to +150°C and dissipates up to 500mW. Packaged in an E-Line (TO-92 compatible) case, it is fully RoHS compliant and halogen-free.

Single FETs, MOSFETs Feature Summary

  • High voltage capability with BVDSS exceeding 200V
  • Low gate drive threshold for efficient switching
  • Totally lead-free and fully RoHS compliant construction
  • Qualified to JEDEC standards for high reliability

Single FETs, MOSFETs Applications

  • Automotive applications requiring specific change control
  • General purpose switching circuits
  • Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct packaging and lead configuration. Confirm that the selected variant meets all necessary automotive or industrial qualification requirements before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust 200V blocking capability in a through-hole package. Ensure the application accounts for the specified thermal resistance and power dissipation limits under steady-state conditions to maintain safe operating junction temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the BS107 series of N-channel MOSFETs from Diodes Incorporated. It utilizes vertical DMOS technology to achieve high breakdown voltage and low on-resistance within a compact E-Line package suitable for general-purpose electronic applications.

Single FETs, MOSFETs Replacement Considerations

For automotive applications requiring AEC-Q101 qualification and PPAP capability, refer to the related Q-suffix parts listed on the manufacturer's website. Verify pinout compatibility and electrical parameters when considering alternative manufacturers.

Single FETs, MOSFETs FAQ

Is the BS107P qualified for automotive use?

Standard versions are not automatically qualified for automotive use. For applications requiring AEC-Q101 qualification and IATF 16949 manufacturing, customers must refer to the specific automotive grade parts with the Q-suffix.

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is 2A, as specified in the absolute maximum ratings table.

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