BSB008NE2LXXUMA1

$2.85

Description：MOSFET N-CH 25V 46A/180A 2WDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3d9daa7234ec Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSB008NE2LXXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 46A/180A 2WDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB008NE2LXXUMA1

Description：MOSFET N-CH 25V 46A/180A 2WDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：46A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：343 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：16000 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 89W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MG-WDSON-2, CanPAK M™
Package / Case：3-WDSON

Single FETs, MOSFETs datasheet and documents for BSB008NE2LXXUMA1

BSB008NE2LXXUMA1

Single FETs, MOSFETs Overview

The BSB008NE2LXXUMA1 is an N-channel OptiMOS Power-MOSFET with a 25 V drain-source breakdown voltage. It features an ultra-low maximum on-state resistance of 0.8 mΩ and supports a continuous drain current of 180 A at 25°C case temperature. The device utilizes a CanPAK MX footprint, measuring less than 0.7 mm in height. Key dynamic parameters include a total gate charge of 258 nC (0V to 10V) and an output charge of 74 nC. Thermal performance includes a junction-to-case bottom thermal resistance of 1.0 K/W.

Single FETs, MOSFETs Feature Summary

Optimized for e-fuse and OR-ing applications
Ultra-low Rds(on) within the CanPAK-MX footprint
Low profile construction under 0.7 mm
Double-sided cooling capability

Single FETs, MOSFETs Applications

E-fuse implementations
OR-ing circuit configurations

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm that the component meets all required JEDEC qualification standards for the target application environment before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when low profile dimensions and high current handling are critical. The double-sided cooling feature allows for efficient heat dissipation in compact designs. Ensure the driving circuit can supply sufficient gate charge to achieve optimal switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS Power-MOSFET family designed for power management and multimarket applications. It integrates advanced silicon technology to minimize conduction losses while maintaining robust avalanche characteristics suitable for demanding industrial environments.