BSB881N03LX3GXUMA1

$1.08

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Infineon Technologies
Package：Bulk

SKU:be4c80052299 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSB881N03LX3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB881N03LX3GXUMA1

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Infineon Technologies
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for BSB881N03LX3GXUMA1

BSB881N03LX3GXUMA1

Single FETs, MOSFETs Overview

The BSB881N03LX3GXUMA1 is an N-channel power MOSFET manufactured by Infineon Technologies. It features a WDSON-2-3 package and supports a drain-source breakdown voltage (Vds) of 30 V. The device is designed for high-performance switching applications in power conversion circuits. It complies with RoHS standards and is supplied in bulk packaging.

Single FETs, MOSFETs Feature Summary

N-channel power MOSFET architecture
Compact WDSON-2-3 surface mount package
RoHS compliant construction

Single FETs, MOSFETs Applications

High-performance switching circuits
Power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix X3G to confirm the specific tape-and-reel or bulk configuration, as suffixes often dictate packaging details rather than electrical function. Confirm the manufacturer is Infineon Technologies, noting that some sources may incorrectly list Cypress Semiconductor due to corporate history. Ensure the component matches the WDSON-2-3 footprint for PCB layout compatibility.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage 30 V N-channel MOSFET is required in a minimal footprint. The WDSON-2-3 package is suitable for space-constrained designs. Verify thermal requirements against the datasheet's power dissipation limits. Ensure gate drive voltages are compatible with the device's threshold characteristics for efficient switching performance.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's discrete semiconductor product line, specifically within the power MOSFET category. It is distinct from the company's CoolGaN transistors and gate driver ICs also listed in search results. The part number structure indicates it is a standard silicon-based MOSFET intended for general-purpose power management tasks.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official Infineon documentation or authorized distributor cross-reference tools to identify equivalent components with matching voltage ratings and package dimensions.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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