Single FETs, MOSFETs BSC005N03LS5ATMA1 product image

BSC005N03LS5ATMA1

$2.35
  • Description:TRENCH <= 40V
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:af4e435f399e Category: Brand:

  
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BSC005N03LS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC005N03LS5ATMA1

  • Description:TRENCH <= 40V
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Ta), 433A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:0.55mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:122 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:8900 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3W (Ta), 188W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8 FL
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC005N03LS5ATMA1

BSC005N03LS5ATMA1

Single FETs, MOSFETs Overview

The BSC005N03LS5ATMA1 is an OptiMOS™ 5 N-channel power transistor with a 30 V drain-source breakdown voltage. It features a maximum on-resistance of 0.55 mΩ at 10 V gate drive and supports a continuous drain current of 433 A at 25 °C. The device operates within a junction temperature range of -55 °C to +175 °C and includes a monolithically integrated body diode. Packaged in PG-TDSON-8, it offers optimized switching charges for fast transitions and high thermal resistance performance.

Single FETs, MOSFETs Feature Summary

  • Very low on-resistance at logic-level gate voltages
  • Optimized gate charge parameters for rapid switching
  • Enhanced ruggedness against induced turn-on events
  • Superior thermal dissipation characteristics

Single FETs, MOSFETs Applications

  • Industrial applications requiring industrial qualification
  • Synchronous rectification circuits
  • High-efficiency DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 to confirm tape-and-reel packaging configuration. Ensure that the PG-TDSON-8 footprint matches the PCB layout requirements. Confirm compliance with RoHS standards and halogen-free specifications as stated in the datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical at 30 V operating levels. Evaluate the thermal resistance values against the expected ambient conditions and PCB copper area. Consider the avalanche energy rating if the application involves inductive load switching or potential overvoltage transients.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™ 5 family, designed for low-voltage power switching. It utilizes advanced silicon technology to achieve high current density in a compact surface-mount package. The series targets efficiency improvements in modern power management systems.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other OptiMOS™ 5 devices offering similar Rds(on) and voltage ratings. Verify pinout compatibility and thermal pad dimensions when substituting with alternative packages.

BSC005N03LS5ATMA1BSC005N03LS5ATMA1
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