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BSC005N03LS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH. Review the specifications below when checking this part for your BOM.
The BSC005N03LS5ATMA1 is an OptiMOS™ 5 N-channel power transistor with a 30 V drain-source breakdown voltage. It features a maximum on-resistance of 0.55 mΩ at 10 V gate drive and supports a continuous drain current of 433 A at 25 °C. The device operates within a junction temperature range of -55 °C to +175 °C and includes a monolithically integrated body diode. Packaged in PG-TDSON-8, it offers optimized switching charges for fast transitions and high thermal resistance performance.
Verify the specific ordering suffix ATMA1 to confirm tape-and-reel packaging configuration. Ensure that the PG-TDSON-8 footprint matches the PCB layout requirements. Confirm compliance with RoHS standards and halogen-free specifications as stated in the datasheet before finalizing procurement orders.
Select this component when low conduction losses are critical at 30 V operating levels. Evaluate the thermal resistance values against the expected ambient conditions and PCB copper area. Consider the avalanche energy rating if the application involves inductive load switching or potential overvoltage transients.
This part belongs to Infineon's OptiMOS™ 5 family, designed for low-voltage power switching. It utilizes advanced silicon technology to achieve high current density in a compact surface-mount package. The series targets efficiency improvements in modern power management systems.
Cross-reference with other OptiMOS™ 5 devices offering similar Rds(on) and voltage ratings. Verify pinout compatibility and thermal pad dimensions when substituting with alternative packages.
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