BSP60E6327

Single Bipolar Transistors Overview

The BSP60E6327 is a PNP silicon Darlington bipolar junction transistor manufactured by Infineon Technologies. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 1 A. The device operates with a transition frequency (fT) of 200 MHz and supports a maximum power dissipation (Pd) of 1.5 W. Packaged in surface-mount PG-SOT223-4-21, it is designed for medium-power switching applications.

Single Bipolar Transistors Feature Summary

• Utilizes PNP silicon Darlington configuration for high current gain
• Supports continuous collector current up to 1 A
• Rated for 45 V collector-emitter voltage
• Surface-mount PG-SOT223-4-21 package design

Single Bipolar Transistors Applications

• Medium-power switching circuits
• General-purpose amplifier stages
• Driver circuits for loads requiring high current gain

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the received part matches the specified PG-SOT223-4-21 package and electrical ratings. Check for physical damage or contamination before integration into circuit designs to ensure reliable operation.

Single Bipolar Transistors Selection Notes

Select this component when a PNP Darlington transistor is required for switching applications involving currents up to 1 A. Ensure the design accommodates the 45 V voltage limit and 1.5 W power dissipation constraints within the SOT223-4-21 thermal envelope.

Single Bipolar Transistors Part Context

This part belongs to Infineon's portfolio of discrete bipolar transistors. The BSP60 series specifically targets applications needing robust switching capabilities with integrated base resistors or high gain structures, packaged for automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.