Single Bipolar Transistors BUJD203AD,118 product image

BUJD203AD,118

$0.83
  • Description:TRANS NPN 425V 4A DPAK
  • Series:-

SKU:91a70cd3e1bb Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BUJD203AD,118 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is TRANS NPN 425V 4A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BUJD203AD,118

  • Description:TRANS NPN 425V 4A DPAK
  • Series:-
  • Mfr:WeEn Semiconductors
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):425 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 600mA, 3A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:11 @ 2A, 5V
  • Power - Max:80 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BUJD203AD,118

BUJD203AD,118

Single Bipolar Transistors Overview

The BUJD203AD,118 is a high-voltage, high-speed planar passivated NPN power switching transistor manufactured by WeEn Semiconductors. It features an integrated antiparallel E-C diode and is housed in a SOT428 (DPAK) surface-mountable plastic package. Key electrical parameters include a collector-emitter voltage (VCEO) of 425 V, a collector-base voltage (VCBO) of 850 V, and a maximum continuous collector current (IC) of 4 A. The device supports a total power dissipation (Ptot) of 80 W and operates at a maximum junction temperature of +150 °C.

Single Bipolar Transistors Feature Summary

  • High-voltage capability with integrated antiparallel emitter-collector diode for efficient switching applications.
  • High-speed planar passivated NPN construction designed for robust performance in demanding environments.
  • Surface-mount DPAK packaging facilitates automated assembly and compact circuit board layouts.

Single Bipolar Transistors Applications

  • Power supply units
  • Industrial motor control systems
  • High-frequency electronic lighting ballasts

Single Bipolar Transistors Procurement Notes

Verify the specific suffix

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a surface-mount NPN transistor with high voltage blocking capabilities and integrated freewheeling functionality. Ensure the thermal management solution supports the specified power dissipation within the DPAK footprint. Confirm that the operating frequency and current requirements align with the device's high-speed switching characteristics and 4 A rating.

Single Bipolar Transistors Part Context

This part belongs to the BUJ series of high-voltage bipolar junction transistors from WeEn Semiconductors. The series includes variants such as the BUJD203AX and BUJ303AD, offering different voltage ratings and package options like TO-220 and DPAK. These transistors are engineered for industrial and consumer electronics applications requiring reliable power switching.

Single Bipolar Transistors Replacement Considerations

Cross-reference with BUJD203AX,127 for pin-compatible alternatives in through-hole configurations or other BUJ series devices if voltage or current specifications differ. Verify package compatibility and thermal resistance values when substituting.

BUJD203AD,118BUJD203AD,118
$0.83
Buy Now

Recent News