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BZT52B4V3 is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ZENER 4.3V 500MW SOD123F. Review the specifications below when checking this part for your BOM.
The BZT52B4V3 is a surface-mount Zener diode from the Taiwan Semiconductor BZT52B series, housed in an SOD-123F package. It provides a nominal Zener voltage of 4.3 V with a tight tolerance of ±2%. The device dissipates up to 500 mW and operates within a junction temperature range of -65°C to +150°C. Electrical characteristics include a maximum dynamic impedance of 90 Ohms at a test current of 5 mA and a maximum reverse leakage current of 2.7 µA at 2.7 V.
Verify that the specific part number matches the required electrical parameters, particularly the 4.3 V nominal voltage and ±2% tolerance. Confirm compliance with RoHS and halogen-free standards if environmental regulations apply. Ensure the SOD-123F footprint aligns with the PCB layout design. Check datasheet notes regarding thermal resistance and power derating curves for proper heat dissipation management.
Select this component when a precise 4.3 V reference is needed in a low-power application. The ±2% tolerance makes it suitable for circuits requiring tighter voltage accuracy than standard 5% devices. Consider the 500 mW power rating and the specific thermal resistance values provided in the datasheet to ensure reliable operation under expected load conditions.
This device belongs to the BZT52B series, which covers a wide selection of Zener voltages ranging from 2.4 V to 75 V. All members of this series share the same SOD-123F mechanical outline and general features, such as matte tin plating and moisture sensitivity level 1 classification. The 'B' suffix indicates the specific ±2% tolerance grade offered by Taiwan Semiconductor.
Compatible substitutes include other manufacturers' Zener diodes in the SOD-123 package with a 4.3 V nominal voltage and ±2% tolerance. Verify that alternative parts meet the 500 mW power dissipation requirement and match the specified dynamic impedance and leakage current limits.
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