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BZX55A11-TAP is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ZENER 11V 500MW DO204AH. Review the specifications below when checking this part for your BOM.
The BZX55A11-TAP is a silicon epitaxial planar Zener diode from the Vishay BZX55 series, housed in a DO-35 glass axial package. It provides a nominal Zener voltage of 11 V with a tight tolerance of ±1%. The device operates at a test current of 5 mA and dissipates up to 500 mW. Key electrical characteristics include a maximum reverse leakage current of 0.1 µA at 8.2 V and a differential impedance of 20 Ω. It features a junction temperature range of -65°C to +175°C.
Verify the specific ordering suffix TAP corresponds to the Ammopack packaging configuration as defined in the manufacturer's order instructions. Confirm that the A-series designation aligns with the required ±1% tolerance specification for your design. Ensure the component meets all applicable environmental compliance standards relevant to your region before finalizing procurement.
Select this component when a tighter voltage tolerance than the standard C-series is required. The BZX55A variant offers ±1% accuracy suitable for precision applications. Consider the DO-35 through-hole package constraints and the 500 mW power dissipation limit relative to ambient temperature conditions. Verify thermal resistance requirements against the lead length specifications provided in the datasheet.
This part belongs to the BZX55 series of silicon epitaxial planar Zener diodes manufactured by Vishay Semiconductors. The series utilizes a standard glass case (DO-35) and is designed for general-purpose voltage regulation. The 'A' suffix indicates a tighter manufacturing tolerance compared to the standard 'C' grade, while the 'TAP' suffix denotes the specific Ammopack packaging format.
BZX55C11-TAP (±6% tolerance)
The BZX55A11 has a voltage tolerance of ±1% of the nominal Zener voltage.
The maximum power dissipation is 500 mW at a junction temperature of 25°C.
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