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CA3102MZ is listed in the Instrumentation, Op Amps, Buffer Amps range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC OPAMP DIFF 2 CIRCUIT 14SOIC. Review the specifications below when checking this part for your BOM.
The CA3102MZ is a dual high-frequency differential amplifier designed for low-power applications up to 500MHz. It integrates two independent differential amplifiers with associated constant current transistors on a common monolithic substrate, ensuring close electrical and thermal matching. The device features six general-purpose transistors exhibiting low 1/f noise and a transition frequency exceeding 1GHz. It operates across the full military temperature range of -55°C to 125°C and is housed in a 14-lead narrow body small outline plastic package (SOIC).
Verify that the specific ordering suffix corresponds to the Pb-free plus anneal material set and RoHS compliance status. Confirm the package drawing designation matches the required 14-lead SOIC form factor. Ensure the supplier provides documentation confirming the component meets the specified military temperature range requirements for the intended operational environment.
Select this component when dual-channel applications require closely matched electrical and thermal characteristics between two differential amplifiers. The separate substrate terminal allows for optimized biasing and isolation strategies. Consider the device's low noise profile and high transition frequency for designs operating near the upper limits of the VHF spectrum.
This part belongs to the CA3102 family of dual high-frequency differential amplifiers manufactured by Renesas Electronics Corporation (formerly Intersil). The CA3102MZ variant specifically denotes the Pb-free version packaged in a 14-lead narrow body SOIC format. It shares core internal architecture with other variants like the CA3102E and CA3102M, differing primarily in termination finish and package style.
CA3102E
The separate substrate connection provides greater design flexibility, allowing the substrate to be connected to the most negative point in the external circuit to maintain transistor isolation.
No, bias and load resistors are omitted from the internal design to provide maximum application flexibility for the user.
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