Memory IC CAT25010VI-GD product image

CAT25010VI-GD

  • Description:IC EEPROM 1KBIT SPI 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:66586a7ef182 Category: Brand:

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CAT25010VI-GD is listed in the Memory IC range at ChipApex. The manufacturer field lists onsemi. Its product description is IC EEPROM 1KBIT SPI 8SOIC. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CAT25010VI-GD

  • Description:IC EEPROM 1KBIT SPI 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Memory Type:Non-Volatile
  • Memory Format:EEPROM
  • Technology:EEPROM
  • Memory Size:1Kbit
  • Memory Organization:128 x 8
  • Memory Interface:SPI
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:5ms
  • Voltage - Supply:2.5V ~ 5.5V
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for CAT25010VI-GD

CAT25010VI-GD

Memory IC Overview

The CAT25010VI-GD is a 1-Kbit Serial CMOS EEPROM manufactured by onsemi, internally organized as 128 words of 8 bits each. It supports the SPI protocol with clock frequencies up to 20 MHz at 5 V and operates within a supply voltage range of 1.8 V to 5.5 V. The device features a 16-byte page write buffer, self-timed write cycles, and hardware/software write protection including block write protection for 1/4, 1/2, or the entire array. It utilizes low power CMOS technology, offering 1,000,000 program/erase cycles and 100-year data retention. Available in an SOIC-8 package, it functions across industrial and extended temperature ranges.

Memory IC Feature Summary

  • Supports SPI Modes (0,0) and (1,1) with a 16-byte page write buffer
  • Features hardware and software write protection including partial and full array protection
  • Utilizes low power CMOS technology for high endurance and long data retention

Memory IC Applications

  • Data storage in embedded systems requiring non-volatile memory
  • Configuration storage in industrial control applications
  • Parameter logging in consumer electronics devices

Memory IC Procurement Notes

Verify the specific suffix GD against official datasheets to confirm package type and temperature grade. Confirm RoHS compliance status and lead times with authorized distributors. Ensure design-in compatibility with existing SPI interfaces and voltage levels before procurement.

Memory IC Selection Notes

Select this component for applications requiring small footprint serial EEPROM with robust write protection. Compare performance metrics such as access time and current consumption against alternative packages like TSSOP or UDFN if space constraints vary. Verify operating voltage requirements align with the 1.8 V to 5.5 V range.

Memory IC Part Context

This part belongs to the CAT25010/20/40 family of SPI Serial CMOS EEPROMs from onsemi. The family shares common architectural features but differs in memory density and package options. The CAT25010 specifically provides 1-Kbit capacity, suitable for storing small amounts of critical data in compact electronic designs.

Memory IC Replacement Considerations

Direct substitutes include other CAT25010 variants with different suffixes indicating package changes, such as CAT25010VI-GT3 (SOIC-8 Tape & Reel) or CAT25010VP2I-GT3 (TDFN-8). Cross-reference pinouts and electrical specifications carefully when substituting.

CAT25010VI-GDCAT25010VI-GD

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