CLA4607-085LF

RF Diode Overview

The CLA4607-085LF is a surface-mountable, low-capacitance silicon PIN limiter diode designed for shunt-connected high-power limiter applications from 10 MHz to over 6 GHz. It features a nominal threshold level of +20 dBm and an I-region width of 7 um. Key electrical specifications include a maximum reverse voltage (VR) of 180 V, a forward current (IF) of 1.5 A at 25 °C, and a CW power dissipation (PD) of 1.3 W. The device exhibits a typical capacitance of 0.35 pF at 38 V and 1 MHz, with a series resistance of 2.0 Ω max at 10 mA and 500 MHz. Thermal performance includes a junction-to-case thermal resistance of 54 °C/W. Operating temperature ranges from -55 °C to +150 °C.

RF Diode Feature Summary

• Low thermal resistance design utilizing a copper ground paddle to minimize junction temperature.
• Ultra-miniature QFN package reduces parasitic inductance effects compared to other surface mount packages.
• Nominal threshold level of +20 dBm suitable for large signal limiter applications.

RF Diode Applications

• Low-loss, high-power limiters
• Receiver protectors

RF Diode Procurement Notes

Verify the specific ordering suffix against official Skyworks documentation to ensure correct packaging configuration. Confirm compliance requirements such as RoHS status and Moisture Sensitivity Level (MSL1) prior to procurement. Ensure handling procedures account for electrostatic discharge (ESD) precautions during storage and transport.

RF Diode Selection Notes

Select this component for shunt-connected applications requiring low insertion loss and high power handling up to 6 GHz. Evaluate the 7 um I-region width and 54 °C/W thermal resistance against system heat sinking capabilities. Verify that the 180 V reverse voltage rating exceeds peak circuit voltages.

RF Diode Part Context

This part belongs to the CLA4607 series of surface-mount limiter diodes manufactured by Skyworks Solutions, Inc. It is specifically engineered for RF receiver protection circuits where minimal signal distortion and effective high-power limiting are required within compact form factors.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet or verified local source material.

RF Diode FAQ

How does the CLA4607-085LF handle DC current during the limiting process?

During limiting, a DC current is generated by charge carriers forced into the I layer by the forward alternations of the large input signal. A complete path must be provided for this current using an RF choke or similar structure.

What is the recommended PCB layout practice for thermal management?

It is recommended to place several vias under the entire footprint of the exposed paddle (pin 2) to minimize both electrical inductance to system ground and thermal resistance to the system heat sink.

What is the recovery time specification for this diode?

The recovery time is 50 ns, defined as the transition time from the high-loss state to the low-loss state following the removal of a high-power input pulse.