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CMJD1000 TR is listed in the Current Regulation - Diodes, Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 100V,1.1MA SURFACE MOUNT DIODE-C. Review the specifications below when checking this part for your BOM.
The Central Semiconductor CMJD1000 is a silicon field effect current regulator diode housed in a low-profile DFN123F surface mount package. It provides constant current regulation over a wide voltage range with a peak operating voltage of 100 V and power dissipation of 445 mW at 25°C. The nominal regulator current (IP) is 1.1 mA, ranging from 0.88 mA to 1.32 mA. Key electrical parameters include a minimum dynamic impedance (ZT) of 0.65 MΩ, a maximum limiting voltage (VL) of 1.7 V, and a temperature coefficient between -0.10%/°C and -0.37%/°C.
Verify the specific ordering suffix required for plating options when purchasing. The datasheet indicates that adding 'TIN/LEAD' requests Tin/Lead plated devices, while 'PBFREE' requests Lead-free plated devices. Confirm these suffixes are appended correctly to the base part number to ensure compliance with project material specifications.
Select the CMJD1000 based on its 1.1 mA nominal regulator current and high dynamic impedance characteristics. Ensure the application requires a peak operating voltage up to 100 V and can accommodate the specified thermal resistance values. Verify that the DFN123F package dimensions align with the target PCB layout constraints.
This component belongs to the Central Semiconductor CMJD0130 through CMJD5750 series of surface mount silicon current limiting diodes. All devices in this family share the same DFN123F package and fundamental operational principles, differing primarily in their specific regulated current ratings and associated electrical characteristics.
No public confirmed substitute part numbers are documented in the provided datasheet.
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