CNY65BEXI

Overview

The CNY65BEXI is a single-channel transistor output optocoupler manufactured by Vishay Semiconductor Opto Division. It integrates a gallium arsenide infrared-emitting diode with a phototransistor in a 4-DIP package. The device features a rated isolation voltage of 8200 Vrms and supports a maximum collector-emitter breakdown voltage of 32 V. It operates within a temperature range of -55°C to 85°C, with a maximum forward current of 75 mA and a minimum current transfer ratio of 100% at 5 mA input.

Feature Summary

• High isolation voltage capability for safety-critical applications
• Optical coupling between infrared LED and phototransistor
• Standard 4-pin DIP packaging for through-hole mounting

Applications

• Industrial control systems requiring high isolation
• Power supply feedback loops
• Signal isolation in noisy environments

Procurement Notes

Verify the specific suffix EXI against official Vishay documentation to confirm pinout and isolation ratings. Ensure compatibility with existing PCB footprints for 4-DIP packages. Check for recent Product Change Notifications regarding material or manufacturing site updates before finalizing procurement orders.

Selection Notes

Select this component when high isolation voltage is required alongside standard transistor output characteristics. Compare current transfer ratio specifications against load requirements. Confirm thermal management needs for the 4-DIP package under maximum operating conditions.

Part Context

Part of the CNY64/CNY65/CNY66 series from Vishay, designed for general-purpose isolation. The CNY65 variant specifically targets applications needing higher isolation ratings compared to standard low-voltage optocouplers. It serves as a bridge between low-voltage control circuits and high-voltage power stages.

Replacement Considerations

CNY65B is a related DIP-4 variant. Verify isolation voltage differences and pin compatibility before substitution.