Memory IC CY7C1061DV18-15ZSXI product image

CY7C1061DV18-15ZSXI

  • Description:IC SRAM 16MBIT PAR 54TSOP II
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:383f90e7963f Category: Brand:

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CY7C1061DV18-15ZSXI is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 16MBIT PAR 54TSOP II. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1061DV18-15ZSXI

  • Description:IC SRAM 16MBIT PAR 54TSOP II
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:16Mbit
  • Memory Organization:1M x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:15ns
  • Voltage - Supply:1.7V ~ 2.2V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:54-TSOP II
  • Access Time:15 ns

Memory IC datasheet and documents for CY7C1061DV18-15ZSXI

CY7C1061DV18-15ZSXI

Memory IC Overview

The Infineon CY7C1061DV18-15ZSXI is a 16-Mbit (1 M × 16) asynchronous Static RAM. It operates within a supply voltage range of 1.7 V to 2.2 V and supports data retention at 1.5 V. The device features a maximum access time of 15 ns, with a maximum operating current of 150 mA and a standby current of 25 mA. It utilizes a 54-pin TSOP II package and is rated for industrial temperatures from -40 °C to +85 °C.

Memory IC Feature Summary

  • Supports automatic power-down when deselected to reduce active power consumption.
  • Features TTL-compatible inputs and outputs for system integration.
  • Includes dedicated CE1 and CE2 chip enable pins to facilitate memory expansion.

Memory IC Applications

  • High-speed data buffering in embedded systems
  • Cache memory applications requiring low latency
  • Industrial control systems

Memory IC Procurement Notes

Verify the component's end-of-life status before finalizing designs. Confirm that the 54-pin TSOP II package dimensions align with the target PCB layout. Ensure the design accommodates the specified 1.7 V to 2.2 V supply voltage requirements and industrial temperature ratings.

Memory IC Selection Notes

Select this component for applications requiring fast asynchronous access and specific byte-level write control via BLE and BHE pins. Consider the 150 mA active current draw during power-up and operation. Verify compatibility with existing logic levels and address pin configurations.

Memory IC Part Context

This part belongs to the Cypress/Infineon Fast Asynchronous SRAM family. It represents a 90 nm CMOS technology implementation designed for high-density storage needs. The product line emphasizes low power consumption alongside high-speed performance characteristics suitable for demanding electronic environments.

Memory IC Replacement Considerations

Check for updated revisions within the CY7C1061 series. Evaluate alternative packages if the TSOP II form factor is unavailable. Confirm functional equivalence regarding timing parameters and voltage specifications before substitution.

Memory IC FAQ

How does the device handle byte-level writes?

Byte-level writes are controlled by the Byte Low Enable (BLE) and Byte High Enable (BHE) pins, allowing independent writing to the lower or upper 8 bits.

What is the data retention voltage?

The device supports data retention at a minimum supply voltage of 1.5 V.

CY7C1061DV18-15ZSXICY7C1061DV18-15ZSXI

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