Memory IC CY7C1263XV18-633BZXC product image

CY7C1263XV18-633BZXC

  • Description:IC SRAM 36MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:afe7ad4d2228 Category: Brand:

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CY7C1263XV18-633BZXC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 36MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1263XV18-633BZXC

  • Description:IC SRAM 36MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II+
  • Memory Size:36Mbit
  • Memory Organization:2M x 18
  • Memory Interface:Parallel
  • Clock Frequency:633 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1263XV18-633BZXC

CY7C1263XV18-633BZXC

Memory IC Overview

The CY7C1263XV18-633BZXC is a 36-Mbit QDR II+ Xtreme Synchronous SRAM organized as 2 M x 18. It supports a maximum clock frequency of 633 MHz with double data rate interfaces on both read and write ports, transferring data at 1266 MHz. The device features a four-word burst architecture with 2.5 cycle read latency when the DOFF pin is asserted HIGH. It operates with a core voltage of 1.8 V ± 0.1 V and an I/O voltage range of 1.4 V to 1.6 V. The component is housed in a 165-ball FBGA package.

Memory IC Feature Summary

  • Supports concurrent independent read and write transactions using separate data ports.
  • Features echo clocks (CQ and CQ) to simplify data capture in high-speed systems.
  • Includes a valid data indicator (QVLD) to signal output data validity.
  • Provides programmable impedance matching via the ZQ pin for system bus compatibility.

Memory IC Applications

  • High-bandwidth networking equipment
  • Telecommunications infrastructure
  • Data center storage controllers

Memory IC Procurement Notes

Verify the specific suffix BZXC against the official Infineon ordering guide to confirm package type and lead-free status. Confirm that the DOFF pin configuration matches the required latency mode, as this affects timing characteristics. Ensure the design accounts for the specified I/O voltage range of 1.4 V to 1.6 V for proper HSTL interface operation.

Memory IC Selection Notes

Select this component for applications requiring high throughput with independent read/write ports. The 633 MHz speed grade offers maximum bandwidth within the QDR II+ Xtreme family. Consider the 2.5 cycle latency requirement and the need for external impedance matching resistors connected to the ZQ pin during system design.

Memory IC Part Context

This part belongs to the QDR II+ Xtreme SRAM family developed by Cypress Semiconductor, now part of Infineon Technologies. It shares the same physical footprint and basic interface logic as the CY7C1265XV18, which offers a 1 M x 36 organization. Both devices utilize the same 165-ball FBGA package and support depth expansion through port select inputs.

Memory IC Replacement Considerations

The CY7C1265XV18 is a compatible alternative within the same family, offering a 1 M x 36 organization instead of 2 M x 18. Verify that the wider data width aligns with the system bus requirements before substitution.

Memory IC FAQ

How does the DOFF pin affect the read latency?

When the DOFF pin is asserted HIGH, the device operates with a 2.5 cycle read latency. If DOFF is asserted LOW or connected to VSS, the device behaves in QDR I mode with a one-cycle read latency.

What is the function of the ZQ pin?

The ZQ pin is used for impedance matching. An external resistor must be connected between ZQ and ground to tune the output driver impedance to the system data bus impedance.

CY7C1263XV18-633BZXCCY7C1263XV18-633BZXC

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