CY7C1312BV18-167BZI

Memory IC Overview

The CY7C1312BV18-167BZI is an 18-Mbit QDR-II SRAM with a 1M x 18 organization. It features separate independent read and write data ports supporting concurrent transactions. The device utilizes a 2-word burst architecture on all accesses, providing double data rate interfaces on both ports at a maximum clock frequency of 167 MHz. It operates with a core voltage of 1.8V and I/O voltage ranging from 1.4V to VDD.

Memory IC Feature Summary

• Separate independent read and write data ports for concurrent operations
• Double Data Rate (DDR) interfaces on both read and write ports
• Two input clocks for output data to minimize clock skew and flight time mismatches
• Echo clocks simplify data capture in high-speed systems

Memory IC Applications

• High-bandwidth networking equipment
• Telecommunications infrastructure
• Data communication systems requiring low latency

Memory IC Procurement Notes

Verify the specific suffix 'BZI' against official Cypress/Infineon documentation to confirm package type and lead-free status. Ensure compatibility with system voltage requirements and clock frequencies. Confirm RoHS compliance status as manufacturing processes may vary by production date.

Memory IC Selection Notes

Select this component when a 1M x 18 memory configuration is required with full-duplex data throughput capabilities. The QDR-II architecture eliminates bus turnaround times, making it suitable for applications demanding simultaneous read and write operations without contention. Verify that the system supports the necessary dual-clock domain timing.

Memory IC Part Context

This part belongs to the CY7C131x BV18 family of synchronous pipelined SRAMs. It shares architectural similarities with the CY7C1310BV18, CY7C1910BV18, and CY7C1314BV18, differing primarily in memory density and data width configurations while maintaining the same QDR-II interface protocol.

Memory IC Replacement Considerations

Direct substitutes within the same family include CY7C1310BV18, CY7C1910BV18, and CY7C1314BV18, provided the specific memory organization matches the application requirements.