CY7C1470BV25-200BZI

Memory IC Overview

The CY7C1470BV25-200BZI is a 72-Mbit (2M x 36) synchronous pipelined burst SRAM featuring NoBL architecture. It supports 200 MHz bus operations with zero wait states and offers a maximum access time of 3.0 ns. The device operates on a single 2.5V power supply with a 2.5V IO supply (VDDQ). It utilizes a 165-ball FBGA package and includes byte write capability, synchronous self-timed writes, and IEEE 1149.1 JTAG boundary scan compatibility.

Memory IC Feature Summary

• No Bus Latency (NoBL) logic enables unlimited true back-to-back read or write operations without wait states.
• Fully registered inputs and outputs support pipelined operation for high throughput.
• Byte Write capability allows selective writing to specific data bytes using Byte Write Selects.
• Synchronous self-timed write circuitry simplifies write sequences by automatically tri-stating outputs.

Memory IC Applications

• High-performance computing systems requiring fast memory access
• Network infrastructure equipment utilizing ZBT-compatible interfaces
• Industrial applications supporting the specified temperature range

Memory IC Procurement Notes

Verify the manufacturer origin, as Infineon acquired Cypress Semiconductor which originally produced this part. Confirm the package type matches the 165-ball FBGA specification. Ensure the speed grade corresponds to the 200 MHz requirement. Check for RoHS compliance status relative to the Pb-free variant designation in the ordering suffix.

Memory IC Selection Notes

Select this component when pin compatibility with ZBT devices is required alongside pipelined performance. The 2M x 36 organization suits wide data bus applications. Consider the 2.5V supply constraint and the availability of the 165-ball FBGA package for PCB layout. Verify that the 200 MHz speed grade meets the system clock requirements.

Memory IC Part Context

This part belongs to the CY7C1470BV25 family of 2.5V synchronous SRAMs. It shares architectural features with the CY7C1472BV25 and CY7C1474BV25 models but differs in memory organization and package options. The NoBL architecture distinguishes it from traditional synchronous SRAMs by eliminating latency during consecutive accesses.

Memory IC Replacement Considerations

Direct substitutes include other speed grades within the same family, such as the CY7C1470BV25-250BZI for higher frequency or CY7C1470BV25-167BZI for lower power. Pin-compatible alternatives may exist among ZBT SRAMs, though functional equivalence must be verified against the NoBL pipeline behavior.