Memory IC CY7C1514KV18-250BZXI product image

CY7C1514KV18-250BZXI

  • Description:IC SRAM 72MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk,Tray

SKU:d567d96a30bb Category: Brand:

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CY7C1514KV18-250BZXI is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 72MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1514KV18-250BZXI

  • Description:IC SRAM 72MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk,Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II
  • Memory Size:72Mbit
  • Memory Organization:2M x 36
  • Memory Interface:Parallel
  • Clock Frequency:250 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for CY7C1514KV18-250BZXI

CY7C1514KV18-250BZXI

Memory IC Overview

The CY7C1514KV18-250BZXI is a 72-Mbit QDR II SRAM with a 2M x 36 organization. It supports a maximum operating frequency of 250 MHz and operates within a core voltage range of 1.7 V to 1.9 V. The device utilizes a 165-ball FBGA package (13 x 15 x 1.4 mm) and features separate independent read and write data ports for concurrent transactions.

Memory IC Feature Summary

  • Supports concurrent read and write operations through separate independent data ports, eliminating the need for bus turnaround.
  • Features a 2-word burst architecture on all accesses to maximize data throughput.
  • Includes echo clocks (CQ and CQ) synchronized to output clocks to simplify data capture in high-speed systems.

Memory IC Applications

  • High-bandwidth networking equipment
  • Telecommunications infrastructure
  • Data routing and switching applications

Memory IC Procurement Notes

Verify that the specific suffix BZXI corresponds to the required lead-free packaging and industrial temperature grade (-40°C to +85°C). Confirm the ordering suffix matches the exact density and speed grade required for the design. Ensure compatibility with the 165-ball FBGA footprint during procurement planning.

Memory IC Selection Notes

Select this component when a 72-Mbit capacity with a 36-bit data width is required. The 250 MHz speed grade provides sufficient bandwidth for demanding synchronous memory interfaces. Consider the 165-ball FBGA package dimensions for board layout constraints.

Memory IC Part Context

This part belongs to the Cypress/Infineon CY7C1514KV18 family of QDR II SRAMs. It shares architectural similarities with the CY7C1510KV18, CY7C1525KV18, and CY7C1512KV18, differing primarily in memory organization and density while maintaining the same interface and pinout.

Memory IC Replacement Considerations

CY7C1514KV18-250BZXC

Memory IC FAQ

How does the device handle concurrent read and write access to the same address?

The SRAM delivers the most recent information associated with the specified address location, including forwarding data from a write cycle initiated on the previous clock rise.

What is the function of the DOFF pin?

Connecting DOFF to ground turns off the internal PLL, causing the device to operate in QDR I mode with a 1-cycle read latency at frequencies up to 167 MHz.

CY7C1514KV18-250BZXICY7C1514KV18-250BZXI

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