CY7C1613KV18-300BZI

Memory IC Overview

The CY7C1613KV18-300BZI is a 144-Mbit QDR II SRAM with an 8 M × 18 organization. It supports a maximum operating frequency of 300 MHz and utilizes a four-word burst architecture. The device features separate read and write ports, double data rate interfaces, and echo clocks for precise timing. It operates with a core voltage of 1.8 V and I/O voltages ranging from 1.4 V to 1.9 V. The component is housed in a 165-ball FBGA package.

Memory IC Feature Summary

• Supports concurrent independent read and write transactions via dedicated data ports
• Utilizes a four-word burst architecture to reduce address bus frequency requirements
• Features echo clocks (CQ/CQ) to simplify high-speed system data capture
• Includes programmable impedance control via the ZQ pin for output driver tuning

Memory IC Applications

• High-bandwidth networking equipment
• Telecommunications infrastructure systems
• Data center storage controllers

Memory IC Procurement Notes

Verify that the specific ordering suffix matches the required speed grade and package variant. Confirm lead-free status if mandated by assembly specifications. Ensure the DOFF pin configuration aligns with the desired PLL operation mode. Validate that the selected part number corresponds to the correct density and organization for the target design.

Memory IC Selection Notes

Select this component when a 144-Mbit capacity with an 18-bit data width is required. Choose this model for applications needing 300 MHz performance levels. Consider the QDR II architecture for designs requiring simultaneous bidirectional data flow without bus turnaround delays. Verify compatibility with existing clocking schemes and voltage domains.

Memory IC Part Context

This device belongs to the Cypress Semiconductor QDR II SRAM family. It shares architectural similarities with the CY7C1615KV18 but differs in organization and density. The series is designed for synchronous pipelined memory applications requiring high throughput and low latency.

Memory IC Replacement Considerations

CY7C1613KV18-300BZXC

Memory IC FAQ

How does the DOFF pin affect read latency?

Asserting DOFF high enables 1.5-cycle read latency. Asserting it low configures the device to operate in QDR I mode with one-cycle read latency.

What is the function of the ZQ pin?

The ZQ pin is used for output impedance matching. An external resistor connects this pin to ground to tune the output drivers to the system bus impedance.